柔性和可印刷有机薄膜晶体管(OTFT)是近年来柔性电子学领域一个学科前沿热点，蕴含丰富的材料科学和器件物理内涵。液相法低温制备具有超低漏电、高介电常数(高K)的栅介质材料是柔性和可印刷OTFT研究领域当前面临的重大挑战之一。本项目拟采取如下思路力图解决这一难题: 1）发展新材料体系。以具有本征超低漏电的La2O3高K材料体系作为研究对象；2) 发展新的薄膜缺陷控制方法。通过梯度升降温法、旋涂溶液配制过程通氧等创新方法，最大限度降低成膜过程中的物理和化学缺陷密度。主要研究内容包括：(1)液相法低温制备低漏电、高K值薄膜；(2) 高K薄膜中缺陷的产生和调控、电荷输运和漏电机理研究；(3) 高K薄膜/有机半导体界面修饰和界面电荷传输机理研究；(4)基于高K介电层的柔性OTFT及简易电路的低压驱动验证。本项目将为未来发展低压驱动、低能耗的可印刷柔性OTFT提供有益的介电材料储备和界面物理基础。

Flexible and printable organic thin film transistor(OTFT) is a cutting-edge research topic in the filed of flexible electronics, which contains abundant material science and device physics. Fabrication of high dielectric constant (High-K) material by using low temperature solution process is one of the key challenges in the field of flexible and printable OTFT devices. In this project, we plan to use the following ideas to solve this problem: 1) Developing new high-K materials. La2O3, which has intrinsically low leakage current, will be chosen as the candidate materials for study; 2) Developing new methods to control the defects in the film. We will adopt new fabrication methods such as step temperature increasing/decreasing and oxygen incorporation during the solution preparation, which are expected to decrease the physical and chemical defect density during the film deposition as small as possible. The main research work will be done as follows: (1) Solution fabrication of low leakage current and high-K value dielectric films at low temperature; (2) Studies on the origin and control of defects, electrical transport, and leakage mechanism in the high-K film; (3) Modification of the high-K/organic semiconductor interface and the mechanism of the interface charge transport; (4) Fabrication and characterization of the low operation voltage and flexible OTFT and corresponding simple circuits. The study in this project will provide useful ideas on the dielectric materials and interface physics for developing low operation voltage, low power consumption, and flexible OTFT devices.