有机非易失性浮栅存储器目前面临的关键问题是高操作电压和器件的长期稳定性。在器件中引入高K材料作为控制和隧穿层可以有效地降低其工作电压，但栅极漏电流影响了器件的长期稳定性。因此如何获得高电容密度和低漏电流的绝缘栅介质结构是实现其低压稳定工作的一个难题。本项目尝试以高K材料取代金量子点作为器件中电荷存储的浮栅层，其优点是高K浮栅层既可以存储电荷，又可以用作绝缘介质来降低栅极的漏电流。项目拟在有机半导体上制备具有不同介电常数和能带结构的高K浮栅层/高K控制隧穿层体系的器件，理论和实验结合，通过定量表征其不同材料组合体系的电学性能、界面结构和高K浮栅/高K隧穿/有机半导体相互之间的能带结构，优化薄膜材料和器件的制备工艺，力争从实验上确定一至二组同时具有高电容密度和低漏电流的高K浮栅/高K控制隧穿层材料体系，可以使有机非易失性浮栅存储器件低压长期稳定工作，为加速其商业化提供有益的实验结果和理论指导。

Recently organic flexiable electron devices are extensively investigated due to their low-cost,large area fabrication, flexibility etc. Organic nonvolatile memory is one of the emerging and very important application directions for organic devices. The key problems for its commerical production are high operation voltage and poor long-term stability of the devices. High-K materials are believed to be effetive in reducing their operation voltages. However the high leakage current in the gate insulator layer greatly degraded its long term stability. Therfore to find a high quality insulator layer with high capacitance and low leakage current density is still a big challenge. In this project, we propse high-K materials to replace the conventional Au nanocrytals as the floating gate in the memory device. The advantages of using High-K materials as the floating gate are : 1) It can be used as a flaoting gate to storage charges; 2) It can also be used as a thick insulator layer to drease the leakage current while without degradation of the total gate capacitance density. Therefore devices with low operation voltage and long term stability can be expected. Different high-K floating gate materials with their corrsponding control oxide and tunneling oxides will be fabricated, and their device memory characteristics will be studied comparatively. Through the quantative study on the interfacial structure, band structure among high K floating gate/high k tunneling oxide/organic semiconductor and optimzation of the processing paratemers for film and device fabrication, we will try to clarify those physical mechanisms responsible for their long term stability and discover one to two groups of high K flaoting gate/high K cotrol and tunneling oxides material systems, which can enable the nonvolatile organic memory devices to operate in a low voltage with a long term stability. This project will contribute to provide some useful experimental results and theoretical guidance for the future commercial productions of organic nonvolatile memories.