自选通阻变存储器的机理及失效机制研究

存储级内存（SCM）可以平衡存储器和内存之间的差距，可以大大优化现在的计算体系。三维垂直结构的阻变存储器（3D-VRRAM）由于其低成本、高密度的特点，成为SCM的最理想结构。本项目着眼于3D-VRRAM架构中的关键问题——自选通阻变存储器的机理解释与可靠性问题，对自选通阻变存储器的制备、器件可微缩特性的研究、自选通阻变存储器的微观机理的分析、自选通阻变存储器的失效机制的探讨和深层次物理证据的获取等方面开展深入的研究。本项目在研究自选通阻变存储材料微观结构与器件性能的关联性方面；借助随机电报噪声探究材料内部缺陷分布，确定非细丝机制的阻变器件的机理方面；借助导导电原子力显微镜和高分辨透射电镜原位在线观测器件电阻转变及失效时内部材料微观变化方面，都有重要的源头创新意义。预计会取得一系列具有我国自主知识产权的创新性的研究成果，为阻变存储器的三维集成提供技术储备，从而推动我国半导体产业发展。

In evolutionary computing system, the storage class memory (SCM) plays an important role in the memory hierarchical in order to compensate the performance gap between the storage media and computing device. 3D VRRAM provides a cost effective integration manner for the SCM application. To explain the mechanism of Self-selective RRAM and the reliability issues, we carry out our research on （1）Fabrication of the self-selective RRAM; (2)Scaling property of the devices; (3) Mechanism and failure mechanism of self-selective RRAM; (4) Characterization of microstructure of the devices. Research contents of this project is innovative in the following aspects: (1)The correlation between microstructure and device performance of the self-selective RRAM; (2)Switching and failure mechanism of self-selective RRAM by RTN-based defect tracking technique;(3)Characterization of microstructure by C-AFM and HR-TEM.A series of innovative research achievements with independent intellectual property rights in China are expected to be achieved, which will provide technical reserves for three-dimensional integration of resistive memory and promote the development of China's semiconductor industry.