First results of a Double-SOI pixel chip for X-ray imaging

First results of a Double-SOI pixel chip for X-ray imaging
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用于 X 射线成像的双 SOI 像素芯片的初步成果

DOI:
10.1016/j.nima.2016.04.022
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发表时间:
2016-09
期刊:
Nuclear Instruments and Methods in Physics Research A
影响因子:
--
通讯作者:
Yang Zhou
Yang Zhou
中科院分区:
其他
文献类型:
--
作者:
Yunpeng Lu;Qun Ouyang;Yasuo Arai;Yi Liu;Zhigang Wu;Yang Zhou

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针对低能X射线成像,设计并测试了一种基于双SOI工艺的原型芯片。对传感器和像素电路进行了表征。了解SOI技术中的长期串扰问题。用脉冲红外激光束验证了像素的工作。信号幅值反映的传感器损耗与I-V曲线反映的传感器损耗一致。s曲线拟合得到的sigma为153 e−,其中等效噪声电荷(ENC)贡献了113 e−。首次解决了SOI技术中的串扰问题,并通过一个计数型SOI像素实现了对低能辐射的定量探测。
Aiming at low energy X-ray imaging, a prototype chip based on Double-SOI process was designed and tested. The sensor and pixel circuit were characterized. The long lasting crosstalk issue in SOI technology was understood. The operation of pixel was verified with a pulsed infrared laser beam. The depletion of sensor revealed by signal amplitudes is consistent with the one revealed byI–Vcurve. An s-curve fitting resulted in a sigma of 153 e−among which equivalent noise charge (ENC) contributed 113 e−. It's the first time that the crosstalk issue in SOI technology was solved and a counting type SOI pixel demonstrated the detection of low energy radiation quantitatively.
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