First results of a Double-SOI pixel chip for X-ray imaging
First results of a Double-SOI pixel chip for X-ray imaging
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用于 X 射线成像的双 SOI 像素芯片的初步成果
DOI:
10.1016/j.nima.2016.04.022
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发表时间:
2016-09
期刊:
影响因子:
--
通讯作者:
Yang Zhou
中科院分区:
文献类型:
--
作者:
Yunpeng Lu;Qun Ouyang;Yasuo Arai;Yi Liu;Zhigang Wu;Yang Zhou
Aiming at low energy X-ray imaging, a prototype chip based on Double-SOI process was designed and tested. The sensor and pixel circuit were characterized. The long lasting crosstalk issue in SOI technology was understood. The operation of pixel was verified with a pulsed infrared laser beam. The depletion of sensor revealed by signal amplitudes is consistent with the one revealed byI–Vcurve. An s-curve fitting resulted in a sigma of 153 e−among which equivalent noise charge (ENC) contributed 113 e−. It's the first time that the crosstalk issue in SOI technology was solved and a counting type SOI pixel demonstrated the detection of low energy radiation quantitatively.
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DOI:
10.1109/23.256656
发表时间:
1993-08
期刊:
--
影响因子:
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影响因子:
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10.1016/j.nima.2005.04.035
发表时间:
2005-09
影响因子:
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