本项目针对GaN基IMPATT、GunnDiode和RTD器件在太赫兹源技术中的广阔应用前景和器件实现中所面临的关键技术难点，基于前期工作中所取得的研究成果，提出了包括p型肖特基接触DDR结构IMPATT、InGaN背势垒平面结构GunnDiode、InAlN晶格匹配势垒结构RTD新型器件结构和器件工艺实现的关键技术，重点采用AlGaN和多周期超晶格结构增强IMPATT器件的p型掺杂效率和混合隧穿机制、采用深浸欧姆接触和表面钝化改善Gunn器件沟道二维电子气分布稳定性、采用InGaN插入层增强RTD器件的2D隧穿模式的稳定性等创新性的关键技术，通过数值仿真研究其工作机理和器件的可制造性，实现GaN基IMPATT器件p区高效率雪崩和隧穿效率以获得稳定的直流负阻特性，实现GaN基Gunn器件沟道区均匀电子分布以获得高场畴振荡，实现GaN基RTD器件的低缺陷密度以获取稳定的隧穿直流负阻特性。

The project focuses on new device structures and fabrications of GaN-based IMPATT, Gunn diode, and RTD which have shown promising applications in technology of terahertz source. Based on previous researches of our group, we propose key techniques on the DDR-IMPATT with p-type GaN Schottky contact, the planar Gunn diode with InGaN back barrier, and the InAlN/GaN/InAlN RTD with InGaN interlayer. Particularly, the AlGaN and supper lattice interlayers are proposed to enhance the p-type doping; the deep ohmic contact and surface passivation are proposed to improve the stability of 2DEG in the channel of Gunn diode; the InGaN interlayer are proposed to enhance 2D-2D tunneling mode. Theoretical investigations of these devices are put on the device mechanism and numerical simulation, and device processing are put on the manufacturability, both of which aims to empirically obtain the high efficient avalanche-tunneling mechanism consequently a negative differential I-V characteristic of DDR-IMPATT, and obtain the uniformly distributed 2DEG in the channel of planar Gunn diode thereby easily form a steady electron domain, and significantly lower the defect density at the interface of quantum well in order to realize a steady I-V characteristic of RTD under the condition of scanning bias-voltage.