本项目面向新一代太赫兹收发系统核心电子器件应用，研究新型GaN基太赫兹IMPATT二极管器件的结构改进和工艺实现，重点解决器件的高功率输出和低噪声控制问题，旨在实现200-300 GHz可用频率源功能。研究采用二极管肖特基阳极结构、Lo-Hi-Lo非均匀掺杂和异质结雪崩区结构，以实现高效率的雪崩渡越特性和高反压下的低泄漏电流特性，同时采用MBE/MOCVD混合外延生长工艺获取高质量的雪崩和漂移区界面形态和超低位错密度的有源区外延结构，旨在显著提高器件的有效注入电流，从而实现IMPATT二极管器件的高功率输出和低噪声特性。预测所研制的IMPATT负阻二极管器件可获得输出功率15-20 dBm和噪声测度≤30 dB的THz信号，用于太赫兹系统中发射/接收链路所需的高性能频率源。

The project is on the study of novel structure and processing of GaN-IMPATT diodes for terahertz transceiver application. The emphasis is put on the mechanism of high output power and low noise of IMPATT diodes, which aims to achieve available oscillators operating at 200-300 GHz. In Particular, we propose a Schottky structural anode contact and a low-high-low doping structural or heterostructural avalanche region for IMPATT diodes in order to achieve highly efficient avalanche/transit procedures and lower leakage currents. Meanwhile, we propose a mixed MBE/MOCVD epitaxial growth technique to achieve the excellent interface morphology and the active region with ultra-low dislocation density for the avalanche/drift region of IMPATT diodes. It aims to significantly improve the carrier injection procedure through the diode so as to achieve both the high output power and the low noise measure. It is predicted that the novel diode accompanied with the outer circuit can be capable of yield terahertz signals with the output power of 15-20 dBm and the noise measure of lower than 30 dB.