可集成的横向功率器件是实现高能效小功率电源系统的关键单元，在横向MOS型功率器件（LDMOS：Lateral Double-diffusion MOSFET）中引入超结耐压层是目前体硅功率半导体和功率集成电路的研究热点。本项目首次从平面PN结的曲率效应出发，分析体硅超结LDMOS击穿电压低的物理机理，从而为体硅横向超结功率器件开辟一个新的研究方向，属于基础性开拓研究。项目研究的新型超结LDMOS结构采用沟槽型深漏端扩散区和场板技术，抑制漏端扩散区的曲率效应，提高器件的击穿电压，改善击穿电压和比导通电阻之间的折衷关系，增强器件抵抗电荷非平衡条件的能力。项目拟研究的击穿电压模型和比导通电阻模型对体硅超结LDMOS的优化设计具有重要的指导作用，新方案充分发挥超结结构的潜力，所用工艺技术成熟，市场应用前景广阔。

The integratable lateral power device is the key unit to realize miniwatt power system which requires high energy efficiency. Introducing the superjunction voltage-sustaining layer in the lateral MOS type power device (LDMOS: Lateral Double-diffusion MOSFET) is a hot research area in the power semiconductor and power integrated circuits on the bulk silicon. This project studies the physic mechanism about the low breakdown voltage in the bulk silicon superjunction LDMOS, starting from the curvature effect of the planar PN junction for the first time. It develops a new research direction for the bulk silicon lateral superjunction power device and belongs to the fundamental pioneering work. The novel superjunction LDMOS studied in this project employs a trench deep drain diffusion and the field plate technique to suppress the curvature effect of the drain diffusion, increase its the breakdown voltage, improve the trade-off relationship between the breakdown voltage and the specific on-resistance and enhance its ability to bear the charge imbalance condition. The breakdown voltage model and specific on-resistance model planned to be researched in this project offer significant guidance for optimizing the bulk silicon superjunction LDMOS. The new solution gives full play to the potential of the superjunction structure. Process technology used in this project is mature and the novel LDMOS has a good market application prospect.