本项目以电阻型铁电非挥发存储应用为背景，提出以金属/超薄铁电簿膜/半导体构成铁电隧穿二极管结构，通过超薄铁电绝缘层中的极化翻转可以同时调控隧穿势垒的高度和宽度，使隧穿电阻在高、低两个阻态之间翻转，实现双稳巨电致电阻。与常见阻变材料不同，该结构中的阻变完全来源于电子贡献，而不依赖于带电缺陷或离子在纳米尺度上的迁移。在已有工作的基础上，我们拟系统研究Pt/BaTiO3/Nb:SrTiO3铁电隧穿二极管结构的制备工艺、电致阻变性能、隧穿机制及其与应变、掺杂浓度等微结构参数的关系。该结构为在非挥发存储领域日益重要的阻变存储提供了一种物理图像清晰、调控机制简单的新思路，由此可能发展一种有巨大应用前景的新型电阻型铁电非挥发随机存储器。

We propose a novel ferroelectric tunnel diode structure, composed of an ultra-thin ferroelectric thin film sandwiched in a metal and a semiconductor, in which giant electroresistance can be achieved due to the simultaneous tuning of the barrier height and barrier width in response to switching of spontaneous polarization in the ferroelectric barrier. Contrast to extensively-studied resistive memory materials, electroresistance in the proposed structure is from pure electronic origin and has nothing to do with voltage-induced migration of matters at the nanoscale. New types of non-volatile memories based on the proposed structure are very promising for non-volatile memory applications. The proposed idea will be demonstrated in Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel diode structures. The fabrication, electroresistance, tunneling mechanism and their dependence on strain and Nb doping concentration will be systematically investigated. If the proposed investigations are successfully implemented, we may provide a new choice, with a clear physical picture and a simple switching philosophy, for resistive random access memories, which becomes more and more attractive in non-volatile memory applications.