太赫兹频段在未来宽带通信、医疗、天文学、光谱学以及公共安全等领域具有重要应用。CMOS工艺的进步使得基于CMOS太赫兹系统的实现成为可能，并逐渐成为研究热点，引起广泛关注。在CMOS工艺下，太赫兹信号源可借助毫米波信号源谐波机制产生。基于以前的工作基础，本项目将面向120GHz及240GHz频段应用，开展基于CMOS工艺的毫米波及太赫兹信号源的联合研究。深入研究CMOS工艺有源及无源器件工艺特性，揭示无源器件及有源器件对信号源性能的影响，建立毫米波及太赫兹频段下的相位噪声解析表达式，研究已有信号源功率合成方法中的调谐范围、相位噪声及输出功率等问题，发掘并寻求性能优良的功率合成方法，形成较为完整的毫米波及太赫兹信号源设计理论及方法，完成实验验证，为未来高集成度CMOS太赫兹系统的实现提供理论及技术支撑。

Terahertz has important applications in future broadband communication, medical imaging, spectroscopy, scurity etc. The scalling of CMOS procss improves the transistor speed a lot, making it possible to realize THz circuits. Recently, the research of CMOS THz circuits has become a hot topic, drawing extensive attention.In principle, THz signal can be generated with mm-wave signal sources through their harmonic mechanism, therefore based on our previous works,this porject will investigate the CMOS THz signal sources, in particular for the 120 GHz and 240 GHz bands. Firstly, the characterisitics of CMOS active and passive devices will be studied thoroughly, and their impact of on the signal sources will be clarified. Secondly, the analytical phase noise expression will be developed. Thirdly, regarding the existing signal source power combining methods,several problems, such as the tuning range, phase noise and output power, will be studied. Furthermore, some new power combining method will be explored. In the end, the theory and design methodology of mm-wave and THz signal sources will be established and verified. The results of this project will give a solid foundation for the research and development of THz circuits and systems.