GaN-on-Si功率器件是功率半导体领域研究热点和战略制高点之一。本申请拟对增强型GaN-on-Si MIS-HEMT场控机理与新技术开展基础研究，其主要创新为：1）增强型GaN-on-Si MIS-HEMT场控能带模型---研究器件的场控能带机理，分析器件结构、材料结构、陷阱电荷及外加电场对器件栅极沟道处的能带结构、二维电子气（2DEG）浓度和阈值电压的影响机制，揭示恒定密度陷阱电荷和能带结构、2DEG浓度、阈值电压的关系，进一步引入陷阱电荷密度与外加电场、陷阱电荷分布函数的关系，从而建立场控能带模型，从理论上揭示器件的场控能带物理本质；2）提出SIPOS阻性钝化技术来优化器件表面电场，通过对研究不同表面电场优化技术对器件耐压、电流崩塌、栅极介质击穿和器件热量分布的影响，实验验证SIPOS阻性表面钝化技术的工作机理及其优越性，为优化器件表面电场提供一种新的技术。

Silicon-based Gallium nitride (GaN-on-Si) power device is one of the research hotspots and strategic commanding points in the field of power semiconductor. This application carries out basic research on the field control energy-band mechanism and new technology of E-mode GaN-on-Si MIS-HEMT, and its main innovative research contains: 1) Field control energy-band model of E-mode GaN-on-Si MIS-HEMT: The field control energy-band mechanism of GaN-on-Si E-mode power devices is studied, and the influence of the device structure, material structure, trap charge and applied electric field on the energy band structure, two-dimensional electron gas (2DEG) density and threshold voltage is analyzed. Then the field control energy-band model for GaN-on-Si E-mode power devices is established. It not only reveals the relationship between the invariant ionized trap density and 2DEG density, but also introduces the relationship between trap charge density and the applied electric field, the trap charge distribution function. 2) SIPOS resistive passivation technology is proposed to suppress the electric field concentration. Through the study of the influence of different electric field optimization technologies, the working mechanism and advantages of SIPOS resistive passivation technology are verified by experiments, which provides a new technology for optimizing the surface electric field of GaN-on-Si MIS-HEMT.