InGaN太阳电池凭借其带宽可调且与太阳光谱完美匹配的特点，已成为国际上氮化物材料和新型高效太阳电池领域的研究热点。然而，随着In组分和材料厚度的增加，InGaN材料出现相分离和产生大量缺陷，不仅降低了器件的内量子效率，也对光生载流子的传输过程产生了重要影响。此外，目前普遍采用的同侧电极结构也给电池的载流子输运、光入射以及尺寸增大带来了不利影响。为突破传统InGaN太阳能电池的限制，本项目将对InGaN材料相分离及晶体缺陷产生机制，器件结构对光电转换效率的影响机理，光生载流子产生及传输过程进行深入研究。在此基础上研制垂直结构InGaN太阳能电池，采用垂直电极结构解决电流传输和电极吸光问题，利用电池表面粗化提高器件外量子效率，通过增加底部反射镜使吸收区的厚度减小，进而缓解InGaN材料的相分离和晶体缺陷产生。本项目将为InGaN太阳能电池性能的提升以及实用化器件的研制提供新的研究思路。

With the adjustable bandwidth and perfect match with solar spectrum, Indium Gallium Nitride (InGaN) solar cells, as one new type of semiconductor cells, have led the edge of the III-group nitrides and photovoltaic devices research field all over the world. However, with the increase of In composition and material thickness，InGaN-based material appeared phase separation and large amount of defects, which reduces the internal quantum efficiency and affects the photo-induced carriers transmission. Besides, the conventional structure with electrodes on the same side brought negative influence on carrier transport, light incidence and size enlargement. In order to break through the restriction of traditional InGaN solar cells, in this program, research will be focused on phase separation of InGaN, crystal defect generating mechanism, structure on the influence of photoelectric conversion efficiency, and photo-induced carrier generation and transmission mechanism. On that basis, InGaN-based solar cell with vertical structure will be developed, which adopting vertical electrodes to solve the problem of carrier transport and electrodes absorption, roughing surface to increase external quantum efficiency, adding bottom reflector to decrease absorption area for relief of the phase separation and crystal defect in InGaN. This program will provide a novel way for the performance enhancement and practical application research of InGaN-based solar cells.