图像传感器作为前端感知工具之一，在智能制造和物联网领域具有重要作用。然而，由于我国半导体工艺的落后以及美日欧专利的垄断，国内大部分图像传感器严重依赖国外进口，高端芯片更是受美日欧禁运。本项目提出场效应电荷耦合器件（FE-CCD）的概念，通过将石墨烯独特的场效应与传统CCD深耗尽势阱相结合，制备出新型宽光谱高灵敏的图像传感器。通过检测石墨烯电导随时间的变化，可以实时监测势阱中光生电荷的积分过程，并且不会破坏信号电荷，实现对CCD单个像素信号的无损读取。因此，提出的器件结构既有CMOS图像传感器快速随机读取的优势，又具备传统CCD的高成像质量、低噪声和宽动态范围。石墨烯与硅的协同吸收能进一步提高器件在硅响应光谱范围外的量子效率，拓宽传统硅图像传感器的工作光谱范围，从而实现多光谱图像融合。这种将新材料与CCD结合的器件结构，有望拓展出一系列新型图像传感器件及相关成像系统。

Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of simple pixel structure, high sensitivity, and low noise. However, the serial charge transfer requires fabrication process incompatible with CMOS, and leads to slower, more complex, and less flexible readout than random access. Here, we propose a new-concept imaging device called field-effect CCD (FE-CCD), based on the capacitive coupling between the semiconductor substrate and the 2D material. The strong field effect of the 2D material enables amplification, and non-destructive direct readout of the integrated charges in single pixel without transfer. Moreover, we will demonstrate that this direct readout can also enhance the functionality of traditional CCD, as verified through the real-time monitoring of serial charge transfer in the FE-CCD array. Our FE-CCD can have the broadband response, allowing for the multispectral image fusion. The FE-CCD concept is also applicable to the 2D heterostructures for reducing the power consumption. The proposed FE-CCD offers a new and viable strategy to monolithically integrate 2D materials into conventional semiconductor-based imaging technology for versatile functionalities.