CrO2磁性半金属薄膜中的磁阻尼特性

CrO2作为高自旋极化率的磁性半金属材料在自旋电子器件中有广阔的应用前景，研究CrO2薄膜中的磁阻尼系数不但可以促进材料的实际应用，同时有利于澄清磁阻尼的物理本质。本课题将对CrO2薄膜中的磁阻尼特性进行系统的研究：在实验上，通过不同的手段与实验设计区分不同来源的阻尼贡献，弄清不同阻尼项的特点，研究薄膜取向、不同元素掺杂、应力以及界面等因素对各阻尼项的影响，探索调控阻尼系数的方法；在理论上，结合实验结果，采用不同的理论模型对不同来源的阻尼项进行模拟计算，弄清不同阻尼项，特别是内禀阻尼的物理本质与调控机制。

CrO2 is very promising for applications in spintronic devices due to its high spin polarization. As an important dynamic constant, magnetic damping constant of CrO2 determines its performance in devices. A good knowledge of its magnetic damping properties will not only prompt the applications of CrO2 but also help us to better understand the behind physics of magnetic damping. In this project, the magnetic damping properties of CrO2 thin films will be comprehensively studied. In the study, different damping contributions will be separated by proper experimental designs. The effects of film orientation, dopants, strain and interface on different damping terms will be investigated, based on which methods for the manipulation of magnetic damping in CrO2 films may be explored. By using different theoretical models, damping terms with different mechanisms will be calculated and compared with those obtained experimentally. The origins of different damping terms, especially the intrinsic damping term will be investigated.