在光耦合和电子输运两个层面上，半导体纳米线都是理想的光电功能结构，其亚波长光敏结构的新颖增益机制锲合了当前红外光电探测技术高分辨、高灵敏度的发展需求。从兼容红外焦平面技术的角度，垂直状态的外延纳米线是更合适的光敏单元，然而到目前为止，对纳米线垂直阵列红外探测能力的开发仍受困于低的增益和信噪比。. 为此，项目基于前期在III-V族纳米线的外延生长、光电特性和单纳米线器件方面的研究积累，提出对单个垂直纳米线的红外光电行为进行考察，结合光谱、微结构等实验手段和数值理论分析，揭示窄带隙纳米线中主导少数载流子寿命和暗电流特性的微观机制；进而通过对纳米线生长及表面处理工艺的优化、二维纳米线共振腔模的设计，将纳米线垂直光电探测的潜在优势拓展至有着更迫切技术需求的红外波段；并通过对波长3微米左右红外光的低噪声、高量子效率响应实现效应验证。

Among the low-dimensional semiconductor structures, nanowire is the most efficient photo-coupling structure. Also the one-dimensional structure of nanowire is an ideal transmission path for the carriers (electrons and holes). All of these make the semiconductor nanowire to be a competitive candidate for photoelectric applications, especially for the photodetecotrs. As is known from the latest published works, the surface state of nanowire is the key parameter to determine the relaxation of nonequilibrium carriers; also, considering that the background carrier concentration reaches a high level in the narrow bandgap nanowires, the potential application of nanowire in photoelectric devices is actually limited. This project is to aim at the exploration of the carrier dynamics and transport properties of nanowires, and to clarify the mechanism of photo-coupling of nanowire arrays. Furthermore, we will try to figure out and solve the factors that restrict the improvement of nanowire’s quantum efficiency and infrared photoresponsivity, based on which, the efficient response nanowire detectors can be expanded to light with wavelength near 3 μm.