基于柔性神经形态器件的新型无机-有机杂化忆阻材料的设计、可控制备与性能研究

针对下一代信息技术对突破冯•诺依曼构架的新型类脑芯片的迫切需求, 本课题面向“类脑”人工神经形态器件和柔性电子技术领域，利用与半导体工艺具有极佳兼容性和独特自限制反应机理的原子层/分子层（ALD/MLD）沉积技术，聚焦在新型无机-有机杂化序构忆阻材料的设计、可控制备与忆阻、力学性能的研究上。一方面利用无机-有机材料体系丰富的无机/有机功能基元杂化所产生的独特物理化学性质，另一方面通过ALD/MLD方法形成三种代表性的空间序构材料（纳米叠层、纳米梯度和纳米复合结构），阐明应力应变对忆阻性能和机理的影响模型，建立材料功能基元/序构与忆阻、力学性能之间的内在联系和协同作用机制，发展具有优良突触可塑性和耐弯折特性的无机-有机杂化忆阻材料体系与器件架构，发展一套与半导体工艺兼容、具有自主知识产权的柔性神经形态器件的低温制备技术，为人工设计无机-有机杂化忆阻序构忆阻材料提供科学依据。

Facing the urgent need of next-generation information technology for brain-like chips beyond von Neumann architecture, this project will aim to brain-inspired artificial neuromorphic devices and flexible electronics. It will focus on the design, controllable fabrication and memristive/mechanical properties of inorganic-organic hybrid memristive materials via attractive atomic/molecular layer deposition (ALD/MLD) technology with excellent compatibility with the semiconductor technology and unique self-limiting reaction mechanism. On the one hand, the unique physicochemical properties of inorganic functional unit/organic functional group hybridization in inorganic-organic material systems are utilized. On the other hand, three representative spatial ordering materials (nanolaminated, nano-gradient and nano-composite structures) are formed by ALD/MLD method. The influence model of stress and strain on memristive mechanism and performance is clarified. The relationship and synergistic mechanism between functional elements/sequence structures of inorganic-organic hybrid materials and memristive/mechanical properties are established. This work provides the scientific fundamentals for the artificial design of inorganic-organic hybrid memristive materials. One competitive and potential project on ALD/MLD applications in new flexible neuromorphic devices will be proposed, including the key memristive material system/device architecture and low-temperature fabrication technology with independent intellectual property rights.