SOI技术以其在抗单粒子上的天然优势而被广泛应用在空间辐射环境下。随着航天技术向深空探测发展，使得SOI器件面临辐射效应和自身可靠性问题的双重高风险。本项目拟就纳米器件面临的最主要的可靠性问题——负偏压温度不稳定性（NBTI）与总剂量（TID）效应的相互影响开展研究。结合应力实验和TCAD仿真研究影响NBTI效应的因素，分析SOI器件的NBTI缺陷形成机理，考虑SOI器件中自加热效应、浮体效应、背栅耦合效应的影响，建立适用于SOI器件的NBTI物理模型。结合电学参数表征和材料表征等不同手段，研究NBTI和TID效应产生陷阱的相关性和相互影响，明确NBTI和TID效应联合作用下的SOI器件性能退化机制。在此基础上形成电离辐射环境下的NBTI测试评估方法，研究将辐射加速因子嵌入SOI器件的NBTI物理模型，建立电离辐射耦合下的NBTI物理模型，并将其应用于宇航用器件的可靠性评估和寿命预测。

Silicon on insulator (SOI) technology is widely used in the space radiation environment due to the natural advantage on single event effect hardening. With the development of space technology to deep space exploration, the SOI devices are confronted with the double risks of radiation effect and self-reliability. The interaction of the negative bias temperature instability (NBTI), which is the main reliability problem in nanometer device and total ionizing dose effects are studied. Based on the stress experiment and TCAD simulation, the factors affecting of NBTI is investigated and the mechanism of NBTI defect formation is analyzed in SOI device. By considering of self-heating effect, floating body effect and back-gate coupling effect, the physical model applied to SOI device is proposed. Combined the electrical parameters characterization and the e materials characterization, the correlation and interrelationship between the NBTI- and TID-induced defects are investigated. The degradation mechanisms of the SOI devices under the joint action of the two effects are also discussed. On the basis of the above, the NBTI evaluation method under ionizing radiation environment is formed. The radiation acceleration factor is embedded in the NBTI physical model for SOI devices and the NBTI physical model coupling with radiation is established. It can be applied on the reliability assessment and life prediction for aerospace devices.