Effect of depolarization field on steep switching characteristics in negative capacitance field effect transistors
Effect of depolarization field on steep switching characteristics in negative capacitance field effect transistors
复制标题
去极化场对负电容场效应晶体管陡峭开关特性的影响
DOI：
10.1088/1361-6641/ab8d48
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发表时间：
2020-04
影响因子：
1.9
通讯作者：
Zheng Li
中科院分区：
文献类型：
--
作者：
Yong-Guang Xiao;Feng-Qian Tan;Luo Yan;Gang Li;Ming-Hua Tang;Zheng Li
推导了负电容场效应晶体管（FET）中去极化场（艾德）效应的理论模型。基于此模型，对金属-铁电-绝缘体-半导体（MFIS）场效应晶体管的电学特性进行了理论研究，包括去极化场与栅电压Vg、艾德和硅表面电位的关系，以及NC-FET的漏源电流和传输特性Vg的关系。计算结果表明，在栅压为0.4 V左右时，由于艾德随Vg的增大而急剧增大，导致了表面电位放大和亚阈值斜率的急剧变化。预计所得结果可为NC-MFIS-FET的设计和性能改进提供一些见解。
A theoretical model for describing the effect of depolarization field (Ed) in the negative capacitance (NC) field effect transistor (FET) was derived. Based on this model, the electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) field effect transistor including the relationship between the depolarizing field and the gate voltage (Vg), Ed and silicon surface potential, and the drain-source current of NC-FET and Vg (transfer characteristics) were theoretically investigated. The computing results demonstrated that the surface potential amplification and the steep subthreshold slope characteristics happened at the gate voltage of about 0.4 V, results from the steep increase of Ed dependent on Vg in the NC-FETs. It is expected that the derived results may provide some insight into the design and performance improvement for the NC-MFIS-FET.
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影响因子：
4.9
作者：
Lee, M. H.;Wei, Y. -T.;Tsai, M. -J.
通讯作者：
Tsai, M. -J.
影响因子：
4
作者：
Khan, Asif Islam;Bhowmik, Debanjan;Salahuddin, Sayeef
通讯作者：
Salahuddin, Sayeef
影响因子：
6.7
作者：
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通讯作者：
A. Nourbakhsh;Ahmad Zubair;S. Joglekar;M. Dresselhaus;T. Palacios
影响因子：
4.9
作者：
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通讯作者：
J. van Houdt;P. Roussel
影响因子：
8.6
作者：
Jo, J. Y.;Kim, D. J.;Noh, T. W.
通讯作者：
Noh, T. W.