An Improved Nonlinear Model for Millimeter-Wave InP HBT Including DC/AC Dispersion Effects
An Improved Nonlinear Model for Millimeter-Wave InP HBT Including DC/AC Dispersion Effects
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一种改进的毫米波 InP HBT 非线性模型,包括 DC/AC 色散效应
DOI:
10.1109/lmwc.2021.3068145
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发表时间:
2021-05
影响因子:
3
通讯作者:
Gao Jianjun
中科院分区:
文献类型:
--
作者:
Zhang Ao;Gao Jianjun
An improved millimeter-wave nonlinear model for InP heterojunction bipolar transistor (HBT) is proposed in this letter. The frequency dispersion effect has been taken into account in the Agilent HBT model in Agilent ADS software. Model verification is carried out by comparison of measured and simulated dc and S-parameters up to 110 GHz.
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DOI:
10.1109/4.272113
发表时间:
1994-02
期刊:
IEEE J. Solid State Circuits
影响因子:
--
作者:
C. T. Dikmen;N. Dogan;M. Osman
通讯作者:
C. T. Dikmen;N. Dogan;M. Osman
影响因子:
3.6
作者:
J. McMacken;S. Nedeljkovic;J. Gering;D. Halchin
通讯作者:
J. McMacken;S. Nedeljkovic;J. Gering;D. Halchin
影响因子:
3.1
作者:
M. Sotoodeh;Lucia Sozzi;Alessandro Vinay;A. H. Khalid;Zhirun Hu;A. Rezazadeh;Roberto Menozzi
通讯作者:
M. Sotoodeh;Lucia Sozzi;Alessandro Vinay;A. H. Khalid;Zhirun Hu;A. Rezazadeh;Roberto Menozzi
影响因子:
3.9
作者:
Wenrui Hu;Andong Huang;Haorui Luo;Yong-xin Guo
通讯作者:
Wenrui Hu;Andong Huang;Haorui Luo;Yong-xin Guo
影响因子:
4.3
作者:
A. Garlapati;S. Prasad
通讯作者:
A. Garlapati;S. Prasad