A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement
A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement
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一种新型横向 IGBT，具有受控阳极，可改善通断状态损耗权衡
DOI：
10.1088/1674-4926/32/7/074005
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发表时间：
2011
影响因子：
5.1
通讯作者：
Li,Zhaoji
中科院分区：
文献类型：
--
作者：
Chen,Wensuo;Zhang,Bo;Fang,Jian;Li,Zhaoji
A new lateral insulated-gate bipolar transistor with a controlled anode (CA-LIGBT) on silicon-on-insulator (SOI) substrate is reported. Benefiting from both the enhanced conductivity modulation effect and the high resistance controlled electron extracting path, CA-LIGBT has a faster turn-off speed and lower forward drop, and the trade-off between off-state and on-state losses is better than that of state-of-the-art 3-D NCA-LIGBT, which we presented earlier. As the simulation results show, the ratios of figure of merit (FOM) for CA-LIGBT compared to that of 3-D NCA-LIGBT and conventional LIGBT are 1.45: 1 and 59.53: 1, respectively. And, the new devices can be created by using additional silicon direct bonding (SDB). So, from the power efficiency point of view, the proposed CA-LIGBT is a promising device for use in power ICs.
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影响因子：
3.1
作者：
You-Sang Lee;Byeong-hoon Lee;Won-Oh Lee;M. Han;Yearn-Ik Choi
通讯作者：
You-Sang Lee;Byeong-hoon Lee;Won-Oh Lee;M. Han;Yearn-Ik Choi
DOI：
10.1109/ispsd.2009.5157997
发表时间：
2009-06
期刊：
2009 21st International Symposium on Power Semiconductor Devices & IC's
影响因子：
--
作者：
T. Terashima
通讯作者：
T. Terashima
影响因子：
3.1
作者：
Udugampola, NK;McMahon, RA;Amaratunga, GAJ
通讯作者：
Amaratunga, GAJ
影响因子：
3.1
作者：
D. Green;M. Sweet;K. Vershinin;S. Hardikar;E. Narayanan
通讯作者：
D. Green;M. Sweet;K. Vershinin;S. Hardikar;E. Narayanan
SOI 衬底上具有 n 区控制阳极的新型横向 IGBT
影响因子：
5.1
作者：
Fang, Jian;Li, Zhaoji;Chen, Wensuo;Li, Zehong;Xie, Gang;Zhang, Bo
通讯作者：
Zhang, Bo