Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions
Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions
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非理想条件下RTCVD制备多晶硅薄膜的缺陷观察
DOI：
10.1007/s11664-010-1145-0
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发表时间：
2010-03
影响因子：
2.1
通讯作者：
中科院分区：
文献类型：
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作者：
采用快速热化学气相沉积法(RTCVD)在非理想条件下在石英衬底上制备了多晶硅薄膜。利用透射电子显微镜、光学显微镜和缺陷刻蚀相结合的方法研究了多晶硅薄膜中的晶体缺陷。我们发现，沉积的多晶硅薄膜中含有大量的孪晶，包括一阶、二阶、三阶和高阶孪晶。除了孪晶外，还发现了层错、位错、位错网、位错环、扩展位错和位错线阵列。最后分析了缺陷产生的原因，认为这是由于RTCVD-石英生长系统的特点、晶格失配和热失配引起的应力、巨大的温度斜率和不理想的沉积条件造成的。虽然我们的实验结果不能代表RTCVD制备的多晶硅薄膜的晶体质量，但它们至少表明了当沉积条件严重偏离最佳条件时，多晶硅薄膜中存在哪些类型和多少个缺陷。
Polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates by rapid thermal chemical vapor deposition (RTCVD) under nonideal conditions. Then, crystallographic defects in the poly-Si films were investigated by using transmission electron microscopy (TEM) and optical microscopy combined with defect etching. We found that as-deposited poly-Si films contain a lot of twin crystals, including first-order, second-order, third-order, and higher-order twinned crystals. Besides twinned crystals, stacking faults, dislocations, dislocation nets, dislocation loops, extended dislocations, and dislocation line arrays were also found. Finally, the origins of the defects were analyzed, being attributed to the peculiarities of the RTCVD-quartz growth system, stress caused by lattice and thermal mismatch, a huge temperature ramp, and nonideal deposition conditions. Although our experimental results cannot represent the crystallographic quality of poly-Si films prepared by RTCVD, they at least indicate what kinds and how many defects exist in poly-Si films when deposition conditions severely deviate from the optimum.
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影响因子：
2.1
作者：
A. Focsa;A. Slaoui;E. Pihan;F. Snijkers;P. Leempoel;G. Beaucarne;J. Poortmans
通讯作者：
A. Focsa;A. Slaoui;E. Pihan;F. Snijkers;P. Leempoel;G. Beaucarne;J. Poortmans
影响因子：
3.7
作者：
S. Wolf;R. Tauber
通讯作者：
S. Wolf;R. Tauber
DOI：
10.1002/9780470727133.ch4
发表时间：
2008-03
期刊：
--
影响因子：
--
作者：
Ludwig Reimer;Helmut Kohl
通讯作者：
Ludwig Reimer;Helmut Kohl
影响因子：
2.1
作者：
G. Beaucarne;S. Bourdais;A. Slaoui;J. Poortmans
通讯作者：
G. Beaucarne;S. Bourdais;A. Slaoui;J. Poortmans
DOI：
10.1051/jp4:2001338
发表时间：
2001-08
期刊：
Journal De Physique Iv
影响因子：
--
作者：
A. Slaoui;S. Bourdais
通讯作者：
A. Slaoui;S. Bourdais