Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction
Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction
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硅掺杂氧化铪铁电和类反铁电薄膜的耐久性能：比较研究和预测
DOI：
10.1016/j.actamat.2018.05.033
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发表时间：
2018-08
期刊：
影响因子：
9.4
通讯作者：
Dong Xianlin
中科院分区：
文献类型：
--
作者：
Liu Xiaohua;Zhou Dayu;Guan Yan;Li Shuaidong;Cao Fei;Dong Xianlin
氧化铪基铁电（FE）和反铁电（AFE）薄膜在存储和能源相关应用中显示出巨大的潜力，而它们在商业化器件中的成功在很大程度上取决于对材料耐久性能的详细表征和深入理解。在这项工作中，双极场循环行为进行了详细的研究FE和AFE类硅掺杂HfO2薄膜。它们的疲劳和击穿电阻的明显差异解释了修改后的开关诱导电荷注入模型。根据一级相变理论，总结和预测了FE、类AFE和AFE掺硅HfO2薄膜在双极场循环应力作用下的极化开关特性的演变。此外，从制备工艺和材料设计两个方面提出了提高HfO2基铁电薄膜耐久性能的方法。
Hafnium oxide based ferroelectric (FE) and antiferroelectric (AFE) thin films show great potentials in memory and energy related applications, while their successes in commercially available devices depend strongly on detailed characterization and deep understanding of the endurance properties of the materials. In this work, the bipolar field cycling behavior has been investigated in detail for FE and AFE-like Si-doped HfO2films. Their apparent differences in fatigue and breakdown resistance are interpreted by the modified switching-induced charge-injection model. Referring to the first-order phase transition theory, we summarize and predict the evolution of polarization switching characteristic for FE, AFE-like and AFE Si-doped HfO2thin films stressed with bipolar field cycling. Additionally, several approaches are suggested to improve the endurance properties of ferroelectric HfO2-based thin films in terms of fabrication process and material design.
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影响因子：
6.2
作者：
M. Park;C. Chung;T. Schenk;C. Richter;M. Hoffmann;S. Wirth;Jacob L. Jones;T. Mikolajick;U. Schroeder
通讯作者：
M. Park;C. Chung;T. Schenk;C. Richter;M. Hoffmann;S. Wirth;Jacob L. Jones;T. Mikolajick;U. Schroeder
影响因子：
4
作者：
Lou, X. J.
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影响因子：
3.2
作者：
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影响因子：
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作者：
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通讯作者：
Setter, N
影响因子：
2.2
作者：
Schroeder, U.;Mueller, S.;Mikolajick, T.
通讯作者：
Mikolajick, T.