An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
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通过减压化学气相沉积生长的应变Ge量子阱异质结构中二维空穴的极高室温迁移率
DOI：
10.7567/jjap.53.04eh02
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发表时间：
2014
影响因子：
1.5
通讯作者：
D. Leadley
中科院分区：
文献类型：
--
作者：
M. Myronov;C. Morrison;J. Halpin;S. Rhead;C. Casteleiro;J. Foronda;V. Shah;D. Leadley
报道了用工业型RP-CVD技术在Si（001）衬底上生长的压应变Ge量子阱（QW）异质结构中的极高的室温二维空穴气（2DHG）漂移迁移率，其值为4230 cm ~ 2 V-1 s-1。该结构的低温霍尔迁移率和载流子密度，在333 mK下测量，分别为777000 cm 2 V−1 s−1和1.9 × 1011 cm−2。这些空穴迁移率不仅在IV族Si基半导体中是最高的，而且在p型III-V族和II-VI族半导体中也是最高的。所获得的室温迁移率是远远高于那些迄今为止报道的Ge量子阱异质结构，并揭示了一个巨大的潜力，应变Ge量子阱在各种各样的电子和自旋电子器件的进一步应用。
An extremely high room temperature two-dimensional hole gas (2DHG) drift mobility of 4230 cm2 V−1 s−1 in a compressively strained Ge quantum well (QW) heterostructure grown by an industrial type RP-CVD technique on a Si(001) substrate is reported. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777000 cm2 V−1 s−1 and 1.9 × 1011 cm−2, respectively. These hole mobilities are the highest not only among the group-IV Si based semiconductors, but also among p-type III–V and II–VI ones. The obtained room temperature mobility is substantially higher than those reported so far for the Ge QW heterostructures and reveals a huge potential for further application of strained Ge QW in a wide variety of electronic and spintronic devices.
影响因子：
3.2
作者：
Shah, V. A.;Dobbie, A.;Leadley, D. R.
通讯作者：
Leadley, D. R.
影响因子：
4
作者：
Dobbie, A.;Myronov, M.;Leadley, D. R.
通讯作者：
Leadley, D. R.
影响因子：
4
作者：
Shah, V. A.;Dobbie, A.;Leadley, D. R.
通讯作者：
Leadley, D. R.