Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates
Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates
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Ge(100)衬底上GeSn/Ge多量子阱的表征和热稳定性
DOI：
10.1007/s10854-016-4974-7
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发表时间：
2016-05
期刊：
影响因子：
--
通讯作者：
Wang Qiming
中科院分区：
文献类型：
--
作者：
Zhang Xu;Liu Zhi;He Chao;Cheng Buwen;Xue Chunlai;Li Chuanbo;Wang Qiming
采用分子束外延技术在Ge（100）衬底上生长了高质量、高Sn含量的GeSn/Ge多量子阱（MQW）结构。多量子阱中GeSn层的Sn含量为7.85%。高分辨X射线衍射（HRXRD）和透射电子显微镜（TEM）观察到高的结晶质量和光滑的界面。清晰的多级卫星峰在HRXRD结果中是可识别的，并且与在模拟中获得的那些一致。在TEM图像中没有观察到螺纹或错配位错。室温光致发光显示出由于量子限制效应在2025 nm附近的直接跃迁的增强发射峰。还进行了快速热退火，并且表明当在400 °C下退火30 s时，MQW结构保持稳定。随着温度的升高，GeSn和Ge层的混合增加，并且在600 °C时结构完全退化。这些结果将为GeSn器件的加工提供有价值的参考。
High-quality, high-Sn-content GeSn/Ge multi-quantum well (MQW) structures were grown on Ge (100) substrates by molecular beam epitaxy. The Sn content of the GeSn layers in the MQWs was 7.85 %. High crystalline quality and smooth interfaces were observed by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). Clear multistage satellite peaks were identifiable in the HRXRD results and were consistent with those obtained in simulations. No threading or misfit dislocations were observed in the TEM images. The room temperature photoluminescence showed an enhanced emission peak of direct transitions around 2025 nm due to the quantum confinement effect. Rapid thermal annealing was also performed and indicated that the MQW structures remained stable when annealed at 400 °C for 30 s. With increasing temperature, the intermixing of the GeSn and Ge layers increased, and the structure completely degenerated at 600 °C. These results will provide a valuable reference for the processing of GeSn devices.
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影响因子：
2.5
作者：
Chang, Guo-En;Chang, Shu-Wei;Chuang, Shun Lien
通讯作者：
Chuang, Shun Lien
影响因子：
1.7
作者：
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影响因子：
4
作者：
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通讯作者：
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影响因子：
4.4
作者：
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通讯作者：
C. D. Thurmond;F. Trumbore;M. Kowalchik
影响因子：
3.8
作者：
Sun, G.;Soref, R. A.;Cheng, H. H.
通讯作者：
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