Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure
复制标题
Si/Er-Si-O 多层结构中的高效 1.53 μm 发射和能量传输
DOI：
10.1016/j.materresbull.2010.11.001
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发表时间：
2011-02
影响因子：
5.4
通讯作者：
Wang, Q. M.
中科院分区：
文献类型：
--
作者：
Zheng, J.;Zuo, Y. H.;Wang, W.;Tao, Y. L.;Xue, C. L.;Cheng, B. W.;Wang, Q. M.
Strong 1.53μm light emission has been achieved in Si/Er–Si–O multilayer structure grown by sputtering method and annealing process. The luminescence intensity at 1.53μm increases with annealing temperature, reaching maximum at about 800°C, and decreases at higher temperatures. It is found that the amorphous Si well layer can sensitize and enhance Er3+luminescence in Er–Si–O sublayer through carrier-mediated processes. Moreover, the Si/Er–Si–O multilayer exhibits much low temperature- and carrier-induced quenching of Er3+luminescence, with the photoluminescence intensity at 1.53μm decreased about a factor of only 1.4 from 80K to 300K. The new Si nanostructure material reported here may open the route towards the realization of electrically pumped Si-based light source.
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