A novel junction-assisted programming scheme for Si-nanocrystal memory devices with improved performance
A novel junction-assisted programming scheme for Si-nanocrystal memory devices with improved performance
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一种新颖的结辅助编程方案，用于具有改进性能的硅纳米晶体存储器件
DOI：
10.1088/0268-1242/26/11/115008
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发表时间：
2011-10
影响因子：
1.9
通讯作者：
Chen, JN
中科院分区：
文献类型：
--
作者：
Liu, J;Zhang, B;Jiang, DD;Bai, J;Zhang, MH;Liu, M;Huo, ZL;Jin, L;Liu, J;Yang, XN;Wang, Y;Yu, ZA;Chen, JN
针对硅纳米晶体存储器件提出了一种新颖的漏极结辅助热电子编程方案。与传统的沟道热电子（CHE）注入不同，该方案采用两条电子注入路径。实验结果表明，与传统的CHE方法相比，新方案的内存窗口增加了近1 V，编程速度提高了近300倍。同时，通过扩大存储窗口，还实现了数据保留和耐用特性的改善，这主要是由于编程/擦除循环期间隧道氧化物退化较少。因此，新方案在硅纳米晶存储器应用中被证明更有前景。
A novel drain-junction-assisted hot electron programming scheme has been proposed for Si nanocrystal memory devices. Different from the conventional channel hot electron (CHE) injection, two electron injection paths are responsible for the proposed scheme. Experimental results show that the new scheme has a nearly 1 V memory window increase and almost 300 times faster programming speed rather than the conventional CHE method. Meanwhile, improved data retention and endurance characteristics have also been achieved with the enlarged memory window, which is mainly due to less tunnel oxide degradation during the program/erase cycling. Therefore, the new scheme is shown to be more promising for Si nanocrystal memory application.
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影响因子：
1.9
作者：
Xiaonan Yang;Yong Wang;M. Zhan;Z. Huo;Qin Wang;S. Long;Ming Liu
通讯作者：
Xiaonan Yang;Yong Wang;M. Zhan;Z. Huo;Qin Wang;S. Long;Ming Liu
影响因子：
3.1
作者：
S. Saha
通讯作者：
S. Saha
DOI：
10.1109/nano.2004.1392328
发表时间：
2004-08
期刊：
4th IEEE Conference on Nanotechnology, 2004.
影响因子：
--
作者：
R. Steimle;R. Rao;M. Sadd;C. Swift;B. Hradsky;S. Straub;T. Merchant;M. Stoker;C. Parikh;S. Anderson;M. Rossow;J. Yater;B. Acred;K. Harber;E. Prinz;B. White;R. Muralidhar
通讯作者：
R. Steimle;R. Rao;M. Sadd;C. Swift;B. Hradsky;S. Straub;T. Merchant;M. Stoker;C. Parikh;S. Anderson;M. Rossow;J. Yater;B. Acred;K. Harber;E. Prinz;B. White;R. Muralidhar
影响因子：
4
作者：
Tiwari, S;Rana, F;Chan, K
通讯作者：
Chan, K
影响因子：
4.9
作者：
E. Lusky;Y. Shacham-Diamand;I. Bloom;B. Eitan
通讯作者：
E. Lusky;Y. Shacham-Diamand;I. Bloom;B. Eitan