Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition
Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition
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层间生长条件对蓝宝石上金属有机化学气相沉积InGaN沟道异质结构输运性能的影响
DOI：
10.1063/1.4917559
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发表时间：
2015-04
影响因子：
4
通讯作者：
Hao Yue
中科院分区：
文献类型：
--
作者：
Zhang Yachao;Zhou Xiaowei;Xu Shengrui;Wang Zhizhe;Zhao Yi;Zhang Jinfeng;Chen Dazheng;Zhang Jincheng;Hao Yue
详细研究了AlN中间层生长条件对InAlN/InGaN异质结性能的影响。由于InGaN沟道的特性不同于传统的GaN沟道，本文提出了两步AlN中间层结构，该结构比恒温生长的中间层结构更适合InGaN沟道异质结构。测试结果表明，两步AlN中间层不仅能显著改善InGaN沟道与势垒层之间的界面形貌，而且能有效保护高质量InGaN沟道。具有两步AlN中间层的InAlN/InGaN异质结构的电子迁移率达到890 cm 2/V s，具有1.78 × 1013 cm-2的高二维电子气密度。实验结果表明，具有两级中间层的InGaN沟道异质结构是一种很有前途的微波功率器件。
The effects of AlN interlayer growth condition on the properties of InAlN/InGaN heterostructures are investigated in detail. Since the properties of InGaN channel are different from the traditional GaN channel, two-step AlN interlayer is proposed, which is proven to be more suitable for the InGaN channel heterostructures than the interlayers grown at constant temperature. Test results show that two-step AlN interlayer can not only significantly improve the interface morphology between the InGaN channel and barrier layers but also make an effective protection of the high-quality InGaN channel. The electron mobility of the InAlN/InGaN heterostructure with two-step AlN interlayer achieves 890 cm2/V s with a high two-dimensional-electron-gas density of 1.78 × 1013 cm−2. The gratifying results indicate that the InGaN channel heterostructure with two-step interlayer is a promising candidate for microwave power devices.
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影响因子：
3.1
作者：
Binari, SC;Ikossi, K;Henry, RL
通讯作者：
Henry, RL
影响因子：
1.9
作者：
S. Gökden;R. Tülek;A. Teke;J. Leach;Q. Fan;J. Xie;Ü. Özgür;H. Morkoç;S. B. Lişesivdin;E. Özbay
通讯作者：
S. Gökden;R. Tülek;A. Teke;J. Leach;Q. Fan;J. Xie;Ü. Özgür;H. Morkoç;S. B. Lişesivdin;E. Özbay
影响因子：
4
作者：
Wong, WS;Sands, T;Johnson, NM
通讯作者：
Johnson, NM
DOI：
10.1002/9783527628414
发表时间：
2008-03
期刊：
--
影响因子：
--
作者：
H. Morko
通讯作者：
H. Morko
影响因子：
4.9
作者：
Kuzmík, J
通讯作者：
Kuzmík, J