Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology
Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology
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180 nm CMOS 技术中总剂量效应的综合研究
DOI：
10.1109/tns.2011.2132145
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发表时间：
2011-04
影响因子：
1.8
通讯作者：
Zou, Shichang
中科院分区：
文献类型：
--
作者：
Hu, Zhiyuan;Liu, Zhangli;Shao, Hua;Zhang, Zhengxuan;Ning, Bingxu;Chen, Ming;Bi, Dawei;Zou, Shichang
全面研究了总电离对180 nm CMOS工艺的影响。首先，我们展示了新的驼峰效应，它有很强的关系到STI角氧化层厚度。其次，研究了辐射后各种器件的漏电流退化。对于器件内漏电流，体掺杂浓度和STI拐角厚度都起着非常重要的作用。对于器件间泄漏，由于STI底部的低电场，发现其对电离辐射不敏感。第三，通过研究漏输出特性，提出了一种提取侧壁寄生晶体管有效阈值电压的方法。最后，我们发现NMOS晶体管的漏极饱和电流在辐照后会增加，特别是窄沟道晶体管。
The effects of total ionizing on a 180-nm CMOS technology are comprehensively studied. Firstly, we show new results on the hump effect which has strong relationship to the STI corner oxide thickness. Secondly, the leakage current degradation in various devices after radiation is investigated. For the intra-device leakage, both body doping concentration and STI corner thickness play very important roles. For the inter-device leakage, due to the low electric field at the STI bottom, it is found to be insensitive to ionizing radiation. Thirdly, a method for extracting the effective threshold voltage of the sidewall parasitic transistor is proposed by studying the leakage output characteristics. Finally, we find that the drain saturation current increases in NMOS transistors after radiation, especially in the narrow-channel ones.
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影响因子：
1.8
作者：
M. Manghisoni;L. Ratti;V. Re;V. Speziali;G. Traversi;A. Candelori
通讯作者：
M. Manghisoni;L. Ratti;V. Re;V. Speziali;G. Traversi;A. Candelori
DOI：
10.1016/j.nima.2007.07.068
发表时间：
2007-12
影响因子：
1.4
作者：
L. Gonella;F. Faccio;M. Silvestri;S. Gerardin;D. Pantano;V. Re;M. Manghisoni;L. Ratti;A. Ranieri
通讯作者：
L. Gonella;F. Faccio;M. Silvestri;S. Gerardin;D. Pantano;V. Re;M. Manghisoni;L. Ratti;A. Ranieri
影响因子：
1.8
作者：
M. Mclain;H. Barnaby;K. Holbert;peixiong zhao;H. Shah;A. Amort;M. Baze;J. Wert
通讯作者：
M. Mclain;H. Barnaby;K. Holbert;peixiong zhao;H. Shah;A. Amort;M. Baze;J. Wert
影响因子：
1.8
作者：
G. Niu;S. Mathew;Gaurab Banerjee;J. Cressler;S. Clark;M. Palmer;S. Subbanna
通讯作者：
G. Niu;S. Mathew;Gaurab Banerjee;J. Cressler;S. Clark;M. Palmer;S. Subbanna
影响因子：
1.8
作者：
Faccio, F;Cervelli, G
通讯作者：
Cervelli, G