Electromigration and Current Noise in Aluminum Based Thin Conductors

铝基薄膜中的电迁移问题已成为一个重要的研究课题 因为这些薄膜广泛用于金属互连， 在超大规模集成电路中，需要承载高电流密度， 电路操作 最近的实验表明，电流（1/f）噪声 测量可以用作检测的敏感工具， 电迁移损伤和预测平均失效时间 (MTF)的电影。 为了开发这个新的研究工具 VLSI电路中的电迁移，各种电流噪声 已用于超大规模集成电路的铝基薄膜将被 研究了 这将通过测量温度来完成， 这些膜在不同环境中的1/f噪声的电流依赖性， 包括氢气和惰性气体环境。 系统测量 将1/f噪声、电迁移损伤和 电影的MTF 了解更多关于动力学的信息 电迁移损伤可以从这些测量中获得。 这 研究将为开发新技术提供信息， 预测VLSI电路中的电迁移损伤。

Electromigration in Al-based thin films has become an important subject of study because these films are widely used for metal interconnections in VLSI circuits and are required to carry high current densities for circuit operation. Recent experiments show that current (1/f) noise measurements can be used as a sensitive tool for detecting electromigration damage and for predicting the mean time to failure (MTF) of the films. To develop this new tool for studying electromigration in VLSI circuits, the current noise of various Al-based thin films which have been used in VLSI circuits will be investigated. This will be done by measuring the temperature and current dependence of 1/f noise of these films in different ambients, including hydrogen and inert gas ambients. Systematic measurements will be made to relate the 1/f noise, electromigration damage, and the MTF of the films. More information about the kinetics of electromigration damage can be obtained from these measurements. This study will give information for developing a new technique for predicting electromigration damage in VLSI circuits.