Microwave Properties of Magnetic-Semiconductor Layers

这种努力涉及的努力，发展理想化的 磁性半导体分层结构。 在海军研究所 实验室的分子豆外延技术将部署在 在Ga_（1-x）In_xAs衬底上蒸镀单晶铁膜。 为 这种材料的组合， 衬底和膜的厚度为零或相对较小。 对于这些增长 条件磁界面效应表现在微波 测量仅依赖于内禀磁表面过程。 特别是PI可能能够第一次测量 铁内禀单轴磁表面各向异性参数 除此参数外，还可计算出其它固有磁参数（磁 弛豫、交换刚度常数、立方磁各向异性.） 将被衡量。 这些测量结果将与众所周知的 理论 物理理解的内在界面效应， 理想化的磁性半导体层应该形成强的基础， 制造新的人造多层结构，例如磁性的 超晶格

This effort deals with the effort to develop idealized magnetic-semiconductor layered structures. At the Naval Research Laboratory the technique of molecular bean epitaxy will be deployed in evaporating single crystal iron films on substrates of Ga1-xInxAs. For this combination of materials the lattice constant mismatch between substrate and film is zero or relatively small. For these growth conditions magnetic interfacial effects as manifested in microwave measurements depend solely on intrinsic magnetic surfaces processes. In particular the PI may be able for the first time to measure the intrinsic uniaxial magnetic surface anisotropy parameter in iron. Besides this parameter, other instrinsic magnetic parameters (magnetic relaxation, exchange-stiffness constant, cubic magnetic anisotropy...) will be measured. These measurements will be compared with well known theories. Physical understanding of intrinsic interfacial effects in idealized magnetic-semiconductor layers should form a strong basis in producing new artificial multilayered structures, such as magnetic superlattices.