A Low Noise Impatt Diode

一系列AlxGa 1-xAs、GaAs异质结可用于产生 一系列潜在的步骤，这些步骤足够大， 高于碰撞电离阈值的导带电子 导致电流相乘的形式为I= Io 2n+。 越小 价带不连续性和更高的散射率可用于 抑制由价带电子引发的碰撞电离。 由此产生的结构被预测为低噪声放大器， 对电源电压的小波动不敏感。 通过 选择适当的层宽度，可以使渡越时间给出 在所需频率下的负阻抗，可用作 放大器或振荡器。 建议进行测试 国家亚微米公司已经制造的两个晶片上 实验室在康奈尔大学和其他晶片将生长与 适当的参数变化，以提高性能， 加深我们对阶梯结构的理解。

A sequence of AlxGa1-xAs, GaAs hetrojunctions can be used to generate a series of potential steps which are just large enough to accelerate conduction band electrons above the threshold for impact ionization leading to current multiplication of the form I=Io2n+. The smaller valance band discontinuity and higher scattering rates can be used to suppress the initiation of impact ionization by valence band electrons. The resulting structure is predicted to be a low noise amplifier and to be insensitive to small fluxuations in the power supply voltage. By picking appropriate layer widths the transit time can be made to give a negative impedance at the desired frequency which can be used as either an amplifier or an oscillator. It is proposed that tests be carried out on the two wafers already fabricated by the National Submicron Laboratory at Cornell and that additional wafers will be grown with appropriate variations in parameters to improve the performance and enhance our understanding of the stepped structure.