Laser-Assisted Epitaxial Growth of II-VI Compound Semiconductors

这是一个用于II-VI化合物半导体外延生长的激光辅助化学气相沉积（LA-CVD）发展的研究项目。重点将放在ZnSe上，它有几个重要的光电器件应用。通过选择性激发和源材料的光解作用，LA-CVD应该比传统技术具有更低的生长温度和更好的化学计量控制。较低的温度对于器件质量II-VI半导体晶体生长技术的发展可能特别重要。该研究计划的第一年将致力于通过确定成功外延沉积的重要参数和技术来证明LA-CVD是一种生长有用质量的ZnSe的可行方法。在第二和第三年，将开发生长过程的定量动力学和质量输运模型。为了将生长条件与电学特性联系起来，将对薄膜的结构和电学特性进行详细的表征。该计划的最终目标是开发一种生长器件质量ZnSe的技术，并利用该材料制造工作的pn结。

This is a research program on the development of laser-assisted chemical vapor deposition (LA-CVD) for the epitaxial growth of II-VI compound semiconductors. Focus will be on ZnSe, which has several important optoelectronic device applications. LA-CVD should allow lower growth temperatures and better Stoichiometric control than conventional techniques, through selective excitation and photodissociation of source materials. Lower temperatures may be particularly important for the development of techniques for the growth of device-quality II-VI semiconductor crystals. The first year of the research program will be devoted to demonstrating that LA-CVD is a viable method for growing ZnSe of useful quality by determining the important parameters and techniques for successful epitaxial deposition. In the second and third years, quantitative kinetic and mass transport models of the growth process will be developed. Detailed characterization of the structual and electrical properties of the films will be made in order to correlate growth conditions with electrical characteristics. The ultimate goal of this program is to develop a technique for the growth of device quality ZnSe and to fabricate working p-n junction from this material.