Center for Study of Epitaxially Grown III-V Semiconductor Surfaces

将建立一个聚焦于分子束外延生长的III-V化合物，特别是砷化镓的结构、电子性质和动力学的磁共振组。该计划将使用光电发射和能量损失研究等探测器来确定感兴趣表面的电子结构。它还将使用直接结构探针，如扫描隧道显微镜和低能电子衍射，以阐明化学键的几何和性质。大量的工作将放在生长过程的动力学研究上。将通过时间相关的蒙特卡罗计算对表面动力学进行理论建模。III-V化合物是一类在技术上重要而有趣的材料，在基础水平上没有得到充分的理解，本计划的目标是提高这种理解。

A MRG focussing on the structure, electronic properties and kinetics of molecular beam epitaxy grown III-V compounds, particularly gallium arsenide is to be established. The program will use probes such as photoemission and energy loss studies to determine the electronic structure of the surfaces of interest. It will also use direct structural probes such as scanning tunneling microscopy and low energy electron diffraction to elucidate the geometry and nature of the chemical bonding. A good deal of effort will be placed on study of the kinetics of the growth process. Theoretical modeling of surface kinetics via time-dependent Monte-Carlo calculations will be conducted. III-V compounds are a technologically important and interesting class of materials which are not sufficiently understood at a fundamental level, and it is the goal of this program to improve that understanding.