Epitaxially Grown III-V Semiconductor Surfaces and Model Interface Formation

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This project explores the behavior of interfaces between overlayers and certain semiconductor surfaces; emphasis will be on the (100) orientation of gallium arsenide, and gallium antimonide. A microscopic understanding of morphology, atomic structure, chemistry(bonding), and electronic states at the interface is sought. The model systems to be studied are chosen on the basis of the formation of abrupt, ordered layers. Materials will be prepared by molecular beam epitaxy, and analyzed by sophisticated electron and photon surface analysis techniques. This work, by providing information on fundamental materials properties and behavior of interfaces is expected to increase basic scientific knowledge of electronic and photonic materials, and to contribute to the advancement of compound semiconductor materials for technological applications such as computing and telecommunications.