Low-Dimensional Phonon Phenomena in Nanometer Scale Structures

系统中电子和声子的输运性质 小于主声子波长的横向尺寸 被研究。 通常，满足此标准的结构 横向尺寸小于100 nm，在晶格温度下 低于1 K。 这些尺寸的导线将在 使用电子束技术的衬底。 为了避免 基片声子与模之间的耦合效应 的电线，结构将独立使用 蚀刻技术 在足够低的温度下， 期望观察到声子的空间量子化， 电线和相应的降维 描述声子谱。 光谱的细节将在 通过研究金属的电导变化来确定 比非弹性散射长度短的导线 电子。 在较长的导线中，磁导测量 将用于研究系统中的电子-声子相互作用 声子和电子的降维。 他总算 将研究声子散射过程和声子 独立电介质中的局域化效应， 半导体电线

The transport properties of electrons and phonons in systems with lateral dimensions less than the dominant phonon wavelength will be studied. Typically, this criterion is met in structures with lateral dimensions less than 100nm and at lattice temperatures below 1K. Wires of these dimensions will be defined on a substrate using electron-beam techniques. In order to avoid the effects of coupling between the substrate phonons and the modes of the wire, the structures will be made free-standing using etching techniques. At sufficiently low temperatures, they expect to observe spatial quantization of the phonons in the wires and so a commensurate reduction in the dimensionality describing the phonon spectrum. Details of the spectrum will be ascertained by studying the conductance variations of metallic wires that are shorter than the inelastic scattering length of the electrons. In longer wires, magneto-conductance measurements will be used to study the electron-phonon interaction in systems of reduced phonon and electron dimensionality. Finally, he will investigate phonon scattering processes and phonon localization effects in free-standing dielectric and semiconducting wires.