Optical Studies of Semiconductors, Semiconductor Multiple Quantum Well Structures and Energy Transfer of Electronic and Molecular Defects in Ionic Crystals
Optical Studies of Semiconductors, Semiconductor Multiple Quantum Well Structures and Energy Transfer of Electronic and Molecular Defects in Ionic Crystals
批准号:
8718228
负责人:
Kong-Thon Tsen
金额:
$7.96万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1988
资助国家:
美国
项目状态:
已结题
起止时间:
1988-03-01 至 1991-08-31
中文摘要
这项研究计划在半导体的皮秒时间分辨拉曼研究,半导体多量子阱(MQW)结构和离子晶体中电子和分子缺陷的能量转移方面进行了研究。程序分为三个子程序:(1)半导体和半导体MQW结构中光激电子-空穴等离子体(EHP)的输运性质,(2)半导体MQW结构中电子-声子和声子-声子相互作用和深杂质,(3)碱金属卤化物中电子和分子缺陷的瞬时能量转移。
英文摘要
This research program is in the areas of picosecond time-resolved Raman studies of semiconductors, semiconductor multiple quantum well (MQW) structures and energy transfer of electronic and molecular defects in ionic crystals. The program is divided into three sub-programs: (1) transport properties of the photoexcited electron-hole plasma (EHP) in semiconductors and semiconductor MQW structures, (2) electron-phonon and phonon-phonon interactions and deep impurities in semiconductor MQW structures, and (3) transient energy transfer of electronic and molecular defects in alkali halides.
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Optical Studies of High-field Electron and Hole Transport in Nitride-based Wide Bandgap Semiconductor Nanostructures
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批准号:0305147
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项目类别:Standard Grant
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资助金额:$15.65万
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财政年份:2003
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负责人:Kong-Thon Tsen
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依托单位:
Transient Optical Studies of Non-equilibrium Excitations in Semiconductors and Energy Transfer Processes in Ionic Crystals
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批准号:9301100
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项目类别:Continuing Grant
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资助金额:$26.5万
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财政年份:1993
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负责人:Kong-Thon Tsen
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依托单位:
海外基金