Multi-Dimensional Computation of Electronic Properties of Semiconductor Microstructures of High Performance Heterojunction Devices

通常定义微结构的电子性质， 固态器件相对于移动的 电荷载流子，i. e.简单的层状结构被称为2- 二维（2D）系统、双约束结构或量子线 和量子球分别定义为一维和零维系统。 在 通常，这些系统被称为超低维系统 系统（ULDS）。 目前的技术是基于2-D系统。 然而，在高分辨率细线光刻和晶体 生长技术表明，量子尺度上的微观结构 线和球也是可能的。 一维或零维人造材料的潜在应用 用于计算机存储器和超高器件集成度的微结构 是相当可观的。 高效的器件仿真算法是必要的 用于模拟微观结构的特性， 下一代超大规模集成电路技术的引入。 这 研究项目致力于开发一个强大的，快速的， 灵活的算法来确定相关的物理和 优化设计和性能的微结构参数 超低维系统（Ultra-low Dimensional Systems） 一批年轻 由设备物理学家、数值分析师和 计算机科学家将形成一个跨学科的小组。

It is usual to define the electronic properties of microstructure of solid state devices in relation to the degree of freedom of mobile charge carriers, i. e. simple layered structures are referred as 2- dimensional (2D) systems, double confined structures or quantum wires and quantum balls are defined as 1-D and 0-D systems respectively. In general, these systems are referred to as Ultra-Low Dimensional Systems (ULDS). Current technology is based on the 2-D systems. However, advances in high resolution fine line lithography and crystal growth techniques indicate that microstructure on the scale of quantum wires and balls may be possible. The potential use of the artificial materials with 1-D or 0-D microstructures for computer memory and ultra-high device integration is considerable. Efficient device simulation algorithms are necessary for modeling the properties of the microstructure and indispensable to the introduction of this next generation of VLSI technology. This research project addresses the development of a robust, fast, and flexible algorithm to determine the relevant physical and microstructure parameters for optimal design and performance of devices of the Ultra-low Dimensional Systems. A team of young investigators composed of device physicists, numerical analyst, and computer scientist will be formed as an interdisciplinary group.