Research in Transport Theory of One Dimensional Semicon- ductor Structures

一维半导体结构输运理论研究

• 批准号: 8510209
• 负责人: Jean-Pierre Leburton
• 金额: $ 15.38万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1985
• 资助国家: 美国
• 起止时间: 1985-10-01 至 1989-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8510209&HistoricalAwards=false
• 关键词: Research; Transport; Theory; Dimensional; Semicon

The new epitaxial technologies of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have added astonishing possibilities to the fabrication of sophisticated semiconductor structures like GaAs-A1As superlattices and heterostructure layers. Progress in fine line lithography makes one-dimensional (1-D) structures feasible in the near future. The potential of these new synthetic materials for device applications are considerable. In this research effort, transport properties will be studied and the possible applications of 1-D semiconductor systems to high performance devices will be explored. The work is theoretical. The approach includes a theory of the dielectric function of quasi-1-D systems and the derivation of the collective modes of a 1-D electron gas. The transport theory is based on the semi-classical Boltzmann equation and special emphasis is given to the electron-polar optical phonon interaction and to inter-carrier scattering. The 1-D electron distribution function for low and high field transport will be obtained. The guideline of this investigation will be the analogy of 1-D structures with magnetotransport. For complex transport processes, simulation methods (Monte Carlo) will be developed.

分子束外延（MBE）和金属有机化学气相沉积（MOCVD）等新的外延技术为GaAs-A1As超晶格和异质结构层等复杂半导体结构的制造增加了惊人的可能性。细线光刻技术的进步使一维（1-D）结构在不久的将来成为可能。这些新的合成材料在器件应用方面的潜力是相当大的。在这项研究中，将研究输运性质，并探索一维半导体系统在高性能器件上的可能应用。这项工作是理论性的。该方法包括准一维系统的介电函数理论和一维电子气体的集体模式的推导。输运理论以半经典玻尔兹曼方程为基础，特别强调电子-极性光学声子相互作用和载流子间散射。得到了低场输运和高场输运的一维电子分布函数。本研究的指导方针将是一维结构与磁输运的类比。对于复杂的运输过程，将开发模拟方法（蒙特卡罗）。