Research in Transport Theory of One Dimensional Semicon- ductor Structures

介绍了分子束外延（MBE）、 金属有机化学气相沉积（MOCVD）已经增加了惊人的 制造复杂半导体的可能性 结构如GaAs-Al As超晶格和异质结构层。 细线光刻技术的进步使得一维（1-D） 在不久的将来可行的结构。 这些新的潜力 用于器件应用的合成材料是相当可观的。 在这 研究工作，运输性能将进行研究和可能的 一维半导体系统在高性能器件中的应用 将被探索。 这项工作是理论性的。 该方法包括 准一维系统介电函数理论和 1-D电子气的集体模式的推导。 的 输运理论基于半经典玻尔兹曼方程， 特别强调了电子极性光学声子 相互作用和载流子间散射。 一维电子 低场和高场输运的分布函数为 得到了 这项调查的指导方针将是类比 具有磁输运的一维结构。 对于复杂的运输过程， 将开发模拟方法（蒙特卡罗）。

The new epitaxial technologies of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have added astonishing possibilities to the fabrication of sophisticated semiconductor structures like GaAs-A1As superlattices and heterostructure layers. Progress in fine line lithography makes one-dimensional (1-D) structures feasible in the near future. The potential of these new synthetic materials for device applications are considerable. In this research effort, transport properties will be studied and the possible applications of 1-D semiconductor systems to high performance devices will be explored. The work is theoretical. The approach includes a theory of the dielectric function of quasi-1-D systems and the derivation of the collective modes of a 1-D electron gas. The transport theory is based on the semi-classical Boltzmann equation and special emphasis is given to the electron-polar optical phonon interaction and to inter-carrier scattering. The 1-D electron distribution function for low and high field transport will be obtained. The guideline of this investigation will be the analogy of 1-D structures with magnetotransport. For complex transport processes, simulation methods (Monte Carlo) will be developed.