Surface Mechanisms in the Chemical Vapor Deposition of Diamond
Surface Mechanisms in the Chemical Vapor Deposition of Diamond
批准号:
8807546
负责人:
Mark D'Evelyn
金额:
$40.93万
依托单位国家:
美国
项目类别:
Continuing grant
财政年份:
1988
资助国家:
美国
项目状态:
已结题
起止时间:
1988-08-01 至 1992-01-31
中文摘要
这笔赠款由特别项目办公室在2004年联合提供。 化学和材料研究部提供 支持D 'Evelyn博士的合作研究, 化学领域的豪格和材料研究领域的Margrave博士 莱斯大学。研究的目的是 金刚石生长的表面机制 通过化学气相沉积(CVD)在良好限定的 条件 生产金刚石的合成工艺 电影是一个高科技领域。 这项工作将采用化学活化的前体,并将 联合收割机化学吸附和反应的表面科学研究 研究了低温下生长宏观金刚石膜的方法, 压力CVD。 这项工作将探讨结构和 吸附的氢和CH物种的反应性, 反应条件与生长的关系 金刚石膜的成膜率和质量,非热处理的重要性, 生长过程中的反应,以及掺杂剂的反应 前体 清洁和吸附物覆盖的单晶金刚石 表面的特征是低能电子 衍射,俄歇能谱,电子能量损失 光谱和其他先进的表面分析技术。 基本表面反应的速率常数为: 测定 C-13标记前驱体CVD法生长金刚石薄膜 金刚石衬底将通过拉曼光谱表征, 反射电子衍射,电子显微镜和 红外衰减全反射 的效用 激光解吸质谱法和激光椭圆偏振法 还将探索CVD生长的原位探针。
英文摘要
This grant, funded jointly by the Office of Special Projects in Chemistry and the Division of Materials Research provides support for the collaborative research of Drs. D'Evelyn and Hauge in Chemistry and Dr. Margrave in Materials Research at Rice University. The objective of the research is the elucidation of the surface mechanisms in diamond growth prepared by chemical vapor deposition (CVD) under well-defined conditions. Synthetic processes for the production of diamond films is an area of high technological interest. The work will employ chemically activated precursors, and will combine surface science studies of chemisorption and reaction with studies of the growth of macroscopic diamond films by low pressure CVD. This work will explore the structure and reactivity of adsorbed hydrogen and CH species, the relationship between the reaction conditions and the growth rate and quality of diamond films, the importance of nonthermal reactions in the growth process, and reactions of dopant precursors. Clean and adsorbate-covered single-crystal diamond surfaces will be characterized by low energy electron diffraction, Auger spectroscopy, electron energy loss spectroscopy and other advanced surface analytical techniques. Rate constants for elementary surface reactions will be determined. Diamond films grown by CVD using C-13 labeled precursors on diamond substrates will be characterized by Raman spectroscopy, reflection electron diffraction, electron microscopy and infrared attenuated total reflectance. The utility of laser-desorption mass spectrometry and laser ellipsometry as in situ probes of CVD growth will also be explored.
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SBIR Phase II: High quality, low cost bulk gallium nitride substrates
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批准号:1026896
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项目类别:Standard Grant
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资助金额:$50.0万
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财政年份:2010
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负责人:Mark D'Evelyn
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依托单位:
SBIR Phase I: High quality, low cost bulk gallium nitride substrates
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批准号:0839729
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项目类别:Standard Grant
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资助金额:$9.99万
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财政年份:2009
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负责人:Mark D'Evelyn
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依托单位:
Mechanisms and Kinetics of Elementary Reactions on Semiconductor Surfaces
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批准号:8715812
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项目类别:Continuing Grant
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资助金额:$22.08万
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财政年份:1988
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负责人:Mark D'Evelyn
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依托单位:
国内基金
海外基金
Exploring the Intrinsic Mechanisms of CEO Turnover and Market
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批准号:--
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项目类别:外国学者研究基金
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资助金额:--
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批准年份:2024
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负责人:HAOFEI Z
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依托单位:
Exploring the Intrinsic Mechanisms of CEO Turnover and Market Reaction: An Explanation Based on Information Asymmetry
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批准号:W2433169
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项目类别:外国学者研究基金项目
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资助金额:--
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批准年份:2024
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负责人:HAOFEI ZHANG
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依托单位: