ROW: (Research Initiation) Modeling and Simulation of ChargeTransport in InP-Lattice Matched Materials and Device Structures

非稳态和瞬态输运效应在决定超小型电子器件的性能方面起着至关重要的作用。对于III-V化合物和合金材料制造的结构尤其如此。这种结构中载流子输运的性质要求使用复杂的建模和仿真技术，以便描述和预测实验观察结果和设备性能。我们将通过开发力矩方程仿真工具以及对现有蒙特卡罗代码进行增强来解决这些建模挑战。本研究的主要目标和贡献将是为两种模拟方法开发一种有效的耦合技术。我们将探讨合适和相容的边界条件的性质。我们还将详细评估力矩方程方法在超小型器件仿真中的有效性和实用性。我们的目标材料系统将是In(x)Ga(1-x)As, In(x)Al(l-x)As和InP，选择这些材料是因为这些材料在光电通信系统中的技术重要性日益增加。为了充分运用这些模拟工具，我们将把注意力集中在一个具有小几何形状和大、快速变化场的器件上，即异质结双极晶体管或HBT。我们的工作将导致对HBT器件物理和具有更高截止频率的新器件设计的更好理解。这些设计将利用新的模拟工具所研究的输运现象。蒙特卡罗和矩方程工具的协调实现以及对器件内容中矩方程方法的评估将加速适合器件设计的有用和有效的仿真工具的开发。这项模拟工作也将为我们未来在hbt相关结构中载流子输运的实验研究提供必要的背景。

Non-stationary and transient transport effects are expected to play crucial roles in determining the performance of ultra-small electronic devices. This is especially true for structures fabricated of III-V compound and alloy materials. The nature of carrier transport in such structures demands the use of sophisticated modeling and simulation techniques in order to describe and predict experimental observations and device performance. We will address these modeling challenges by developing a moment-equation simulation tool as well as making enhancements in our existing Monte Carlo code. A prime objective and contribution of this research will be the development of an efficient coupling technique for the two simulation approaches. Details of the nature of suitable and compatible boundary conditions will be explored. We will also make a detailed assessment of the validity and utility of the moment-equation approach for ultra-small device simulation. Our target material systems will be In(x)Ga(1-x)As, In(x)Al(l-x)As, and InP, chosen because of the increased technological importance of these materials in opto-electronic communication systems. In order to fully exercise these simulation tools, we will focus our attention on a device characterized by both small geometries and large, rapidly varying fields, the heterojunction bipolar transistor or HBT. Our work will lead to an improved understanding of HBT device physics and new device designs exhibiting higher cut-off frequencies. These designs will exploit the transport phenomena studied with the new simulation tools. The coordinated implementation of the Monte Carlo and moment-equation tools and the assessment of the moment-equation approach in a device content will hasten the development of useful and efficient simulation tools suitable for device design. This simulation effort will also provide the necessary background for our future experimental investigations of carrier transport in HBT-related structures.