ROW: (Research Initiation) Characterization and Optimization of Ultrathin Silicon Oxynitrides Formed by Ion Implantation

这项研究的目的是通过在单晶硅中注入高剂量、低能量(5keV)的氮或氮和氧形成超薄(150A)氮化硅和氮氧化物绝缘体。将通过测量结电容和电导(作为电压和频率的函数)、电流与电压的关系、椭偏仪、俄歇电子能谱(AES)、加速寿命测试以及电应力和击穿来对样品进行评估。使用临时水银接触将允许单独评估绝缘体，包括注入和退火条件的变化；以及使用各种金属作为栅极接触的薄膜的评估。计算机控制的测量将允许广泛的数据采集和分析。

The objective of the proposed research is characterization of ultrathin (150A) silicon nitride and oxynitride insulators formed by high dosage, low energy (5 keV) implantation of nitrogen or nitrogen and oxygen into single crystal silicon. Samples will be evaluated with measurements of junction capacitance and conductance (as functions of voltage and frequency), current vs. voltage, ellipsometry, Auger electron spectroscopy (AES), accelerated life testing, and electrical stressing and breakdown. Use of a temporary mercury contact will permit evaluation of the insulator alone, including variations of implantation and annealing conditions; and evaluation of films with various metals as gate contacts. Computer controlled measurements will permit extensive data acquisition and analysis.