Processing of Metals and Semiconductors with Emphasis on theRole of Surfaces, Interfaces, and Grain Boundaries

该研究项目主要针对两个主要领域：（i） 金属合金加工和（ii）半导体加工 材料. 连接这两个区域的组件是 模拟和理论工作，旨在预测材料 特性. 离子束金属加工研究 混合、冲击固结、机械合金化和合成 层状和亚稳态材料。 半导体 工艺研究采用Si和GaAs上的外延生长，离子 注入、成核和生长新相， 无定形碳 使用精密的电子显微镜 仪器是研究项目的核心。 更好 理解界面、表面和晶粒的影响 材料特性的边界是本研究的主要目标， 研究

This research project is directed in two major thrust areas (i) processing of metal alloys and (ii) processing of semiconductor materials. A component connecting both of these areas is simulation and theory work aimed at predicting materials properties. The metal processing research employs ion beam mixing, shock consolidation, mechanical alloying, and synthesis of layered and metastable materials. The semiconductor processing research employs epitaxial growth on Si and GaAs, ion implantation, nucleation and growth on new phases such as amorphous carbon. The use of sophisticated electron microscopy apparatus is central to the research projects. Better understanding of the influence of interfaces, surfaces and grain boundaries on materials properties is a primary goal of this reserach.