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Presidential Young Investigator Award: The Chemistry of Recombination Sites at Semiconductor Interfaces

Presidential Young Investigator Award: The Chemistry of Recombination Sites at Semiconductor Interfaces
总统青年研究员奖:半导体界面复合位点化学
批准号:
8814263
负责人:
Nathan Lewis
金额:
$6.25万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1988
资助国家:
美国
项目状态:
已结题
起止时间:
1988-07-01 至 1990-06-30

项目摘要

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中文摘要
翻译
这个总统青年研究者奖项目是在分析和表面化学的一般领域,在界面电荷转移的子领域。本研究的目的是对控制半导体/液体结处光效应的微观变量进行定量的预测描述。具体工作包括探索新的半导体/液体结,发展描述已知系统行为的定量理论,以及化学和物理探针的发展,以表征这些连接处的表面重组位点。这一行动提供了25,000美元的基础资金加上37,500美元的完全匹配资金,用于该总统青年研究员奖的第五年也是最后一年,该奖最初授予刘易斯教授(CHE-8352151),当时他是斯坦福大学的一名教员。该奖项支持的研究为如何控制半导体/液体界面的光电化学过程提供了见解,并为合理设计新的和改进的光电化学系统指明了方向。
英文摘要
This Presidential Young Investigator Award project is in the general area of analytical and surface chemistry and in the subfield of interfacial charge transfer. The objective of this research is to develop a quantitative, predictive description of the microscopic variables which control photoeffects at the semiconductor/liquid junction. Specific efforts include exploration of new semiconductor/liquid junctions, development of quantitative theories for describing behavior of known systems, and development of chemical and physical probes for the characterization of surface recombination sites at these junctions. This action provides the $25,000 base plus $37,500 in fully matched funds for the fifth and final year of this Presidential Young Investigator Award which was originally granted to Professor Lewis (CHE-8352151) when he was a faculty member at Stanford University. The studies which are enabled by this award are providing insights into how photoelectrochemical processes at semiconductor/liquid interfaces can be controlled and are pointing the way toward the rational design of new and improved photoelectrochemical systems.
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Elucidating essential factors for production of recombinant secreted proteins through proteomics
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  • 项目类别:
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  • 资助金额:
    $67.0万
  • 财政年份:
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  • 负责人:
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  • 资助金额:
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Achieving Molecular Level Control Over the Chemical, Electrochemical, and Electrical Properties of Crystalline Si Surfaces
  • 批准号:
    1808599
  • 项目类别:
    Standard Grant
  • 资助金额:
    $54.0万
  • 财政年份:
    2018
  • 负责人:
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Achieving Molecular Level Control over the Chemical, Electrochemical, and Electrical Properties of Crystalline Si Surfaces
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    1214152
  • 项目类别:
    Standard Grant
  • 资助金额:
    $55.5万
  • 财政年份:
    2012
  • 负责人:
    Nathan Lewis
  • 依托单位:
海外基金