The Structure and Reactivity of Semiconductor Surfaces in Etching and Deposition

本研究的主要主题是了解和控制半导体表面的原子结构和化学反应性，以及晶体半导体蚀刻、表面制备和外延沉积过程中的反应动力学。实验方面的工作将重点研究暴露于各种反应性化学环境下的硅表面的结构和结构变化（例如，吸附位置几何形状，暴露于卤素原子的硅100表面的重建和稳定）。在这部分工作中使用的技术包括：低能电子衍射冲击碰撞离子散射光谱。第二类实验将集中于发生在半导体表面的热反应，测量反应的速率和能量学。表面结构对化学反应的影响将用程序升温解吸法进行研究。

The major theme of this research is to understand and control atomic structure and chemical reactivity of semiconductor surfaces, kinetics of reactions involved in etching, surface preparation and epitaxial deposition of crystalline semiconductors. The experimental aspects of the work will emphasize investigation of the structure and structural changes of silicon surfaces exposed to various reactive chemical environments (e.g., adsorption site geometries, reconstruction and stabilization of the silicon 100 surface exposed to halogen atoms). Techniques used in this portion of the work include: low energy electron diffraction impact collision ion scattering spectroscopy. The second category of experiments will focus on the thermal reactions that occur on semiconductor surfaces, measuring the rates and energetics of the reactions. The influence of surface structure on chemical reactions will be studied using temperature programmed desorption.