Continuously Tunable Light-To-Heavy Hole Semiconductor Laserfor the Millimeter and Submillimeter Range (REU Supplement)

本研究计划是对一种新型的连续可调谐固体激光源进行实验和理论研究，用于毫米波-亚毫米波，红外光谱区域。该激光器将通过p型半导体的轻、重空穴价带之间的光学跃迁产生辐射。这种新型固体激光器具有在红外-亚毫米区域3-1频率范围内连续调谐的能力，脉冲功率水平大于10瓦。如果开发成功，这种新的低成本来源将为亚毫米科学和商业活动做出重大贡献。此外，在具有一对变间距能级的量子系统中移动分布函数的新的激光反演思想显示出在激光领域开辟新的研究途径的希望。

This research program is for an experimental and theoretical study of a new type of continuously tunable solid state laser source for the millimeter-submillimeter, infrared IR region of the spectrum. This laser would generate radiation by means of optical transitions between light and heavy hole valence bands of p-type semiconductors. This new type of solid state laser has the capability of continuously tuning over a 3-1 frequency range in the IR-submillimeter region with pulsed power levels of greater than 10 watts. If developed, this new low-cost source could contribute significantly to submillimeter scientific and commercial activity. Also, the new laser inversion idea of shifting distribution functions in a quantum system having a pair of variable spaced energy levels shows promise of opening new research avenues in the laser area.