Laundau Level Semiconductor Lasers for the Millimeter- Submillimeter Region

该提案的目标是研究和开发陆军研究实验室感兴趣的基于半导体朗道能级的高功率和低功率连续可调谐毫米波和亚毫米波激光器。最初的研究将是体半导体材料（即Ge，GaAs），由脉冲E场和直流B场激发，其中E.B = 0。在pGe中产生了大量10-120cm-1范围内的激光信号，E场和B场在1- 2kv /cm和0.5-2.0 tesla范围内。具体的目标是了解激光动力学和激光周期，利用激发态光谱学利用分子激光的众多信号。1-2%的激光效率可以很容易地在一个困难的光谱范围内产生千瓦的脉冲功率。对于低功耗应用，将研究异质结构中的朗道能级。100ghz以上的实际信号源难以实现，这给毫米-亚毫米区域的发展带来了困难。本研究的目的是促进这一发展。亚毫米范围是从微波到光学技术的过渡区域，因此为研究生提供了在场论，量子电子学，半导体，光学，光谱学和材料特性方面的广泛教育。＊＊＊

9414450 Coleman The objectives of this proposal are to study and develop high and low power continuously tunable millimeter and submillimeter wave lasers based upon Landau levels in semiconductors that are of interest to the Army Research Laboratory. The initial study will be on bulk semiconductor materials (i.e., Ge,GaAs), excited by pulsed E field and dc B fields where E.B = 0. Numerous laser signals in the range 10-120cm-1 have been generated in pGe with E and B fields in the range 1-2 kV/cm and 0.5-2.0 tesla. Specific objectives are to understand the laser dynamics and laser cycle by employing excited state spectroscopy using the numerous signals available from molecular lasers. Laser efficiencies of 1-2% could readily yield kilowatts of pulsed power in a difficult range of the spectrum. For low power applications, Landau levels in heterostructures will be investigated. Practical sources above 100 GHz are difficult to achieve which makes it difficult to develop the millimeter-submillimeter region. The aim of this study is to contribute to this development. The submillimeter range is a transition region from microwave to optical techniques and as such offers the graduate student a broad education in field theory, quantum electronics, semiconductors, optics, spectroscopy and material properties. ***