Computational Studies of Carrier Transport in Semiconductors with Ultrasmall Scales

这项研究计划的目的是通过发展新的和先进的数值技术来研究超小空间和/或时间尺度的半导体器件中载流子输运现象的基本原理。要调查的一般研究领域是：1)开发三个-维蒙特卡罗器件模拟器。2)提出了一种基于占位概率流和转移率矩阵的材料和器件模拟算法。新的和先进的方法有望比传统的模拟器更强大、更详细和更完整，并可以为研究载流子传输中的一些基本问题提供重要的技术和工具，如各向异性效应，非平稳输运和量子力学现象。一旦公式完成，每种方法都将被应用于分析材料和器件结构中的各种运输问题，通过这些方法可以充分利用和展示每种方法的优势。这些知识对于新型电子和光电子器件的设计优化和可行性研究将是至关重要的，这些器件的尺寸不断减小，使得传统的模拟技术更具问题和价值下降。

The objective of this research program is to study the underlying principles of carrier transport phenomena in semiconductor devices with ultrasmall spatial and/or temporal scales through the development of new and advanced numerical techniques. The general areas of research to be investigated are: 1) The development of a three- dimensional Monte Carlo device simulator. 2) The development of an algorithm for materials and device simulation which is based on the concept of occupation probability flux and the transition rate matrix. The new and advanced methods are expected t be more powerful, detailed and complete than conventional simulators, and can provide important techniques and tools to study some of the fundamental questions in carrier transport, such as anisotropy effects, non-stationary transport and quantum mechanical phenomena. Once the formulations are complete, each method will be applied to analyze various transport problems in materials and device structures through which the advantages of each method can be fully utilized and demonstrated. The knowledge developed in this work will be of crucial importance to the design optimization and feasibility study of novel electronic and optoelectronic devices, whose ever-decreasing dimensions render conventional simulation techniques more problematic and of declining value.