Raman Scattering of Ultrathin Film Semiconductors

薄膜非晶和微晶的研究 半导体将被用来获得基本信息， 系统的物理性质和结构， 亚单层覆盖。 结合拉曼散射 增强方法，紫外光电发射测量， 状态密度随岛大小的变化，以及额外的 用于研究薄膜的离散波长椭圆偏振测量 生长都将在原位进行。 重点将放在 使用高成核密度无序碳基底 以前用于晶体过渡金属的研究。 拉曼散射方法也将用于研究团簇 在弱相互作用的基质中分离。 的基本目标 这些研究是为了获得关于有限尺寸效应的信息， 改性表面键合的振动，电子和 半导体团簇系统的光学性质。

The study of ultrathin film amorphous and microcrystalline semiconductors will be utilized to obtain basic information on the physical properties and structure of systems extending to submonolayer coverages. A combination of Raman scattering enhancement methods, ultraviolet photoemission measurements of changes in the density-of-states with island size, and additional discrete wavelength ellipsometry measurements for studying film growth all will be performed in situ. Emphasis will be placed on the use of high nucleation density disordered carbon substrates used previously in studies of crystalline transition metals. Raman scattering methods will also be utilized to study clusters isolated in weakly interacting substrates. The basic goal of these studies is to obtain information on finite size effects and modified surface bonding on the vibrational, electronic and optical properties of semiconducting cluster systems.