Presidential Young Investigator Award

本次总统青年研究者奖的目标是 获得对结构的基本了解， 固体薄膜表面和界面的性质及其 与气相沉积的物理和化学的关系。 薄膜科学在这些方面的进展一直非常缓慢 由于沉积工艺的复杂性和 相对缺乏用于研究成核的原位探针， 在表面和界面处的反应，特别是在反应中， 化学气相沉积的高压环境。 原位 表征变得重要，因为光学、机械和 电子应用变得更加苛刻 必须按照更严格的规格制作。 原位 分光光度计（SE）是一种单分子层敏感的、非线性的， 微扰技术，将适用于一系列这样的 问题 实验过程中的能力 发展将允许在真实的时间内获得光谱， 在这些薄膜生长过程中的每一埃。 其他光学 技术也将得到发展。 准备能力 将包括等离子体增强化学气相沉积， 蒸发的物理气相沉积技术（具有和 无离子辅助）、磁控溅射和离子束 散射 初步研究将集中在成核 微晶金刚石薄膜的界面结构 以及它们的表面对充分表征的惰性 和反应离子束。 类似的实验将用于 探测成核、表面反应性和键合， 硅基薄膜。 其他重要技术材料 将被研究。 这些实验将用于识别 掩盖薄膜粘合和形态的物理因素， 冲击材料技术

The objectives of this Presidential Young Investigator Award are to obtain a fundamental understanding of the structure and properties of thin solid film surfaces and interfaces and their relationship to the physics and chemistry of vapor deposition. Progress in these aspects of thin film science has been very slow owing to the complexity of the deposition processes and the relative lack of in situ probes for studying nucleation and reactions at surfaces and interfaces, particularly in reactive, high pressure environments of chemical vapor deposition. In situ characterization gains importance as optical, mechanical and electronic applications become more demanding and film structures must be made to more exacting specifications. In situ spectroscopic cilipsometry (SE) is one monolayer-sensitive, non- perturbat technique which will be applied to a range of such problems. The experimental capabilities in the process of development will allow optical spectra be taken in real time at every Angstrom during the growth of these films. Other optical techniques will also be developed. The preparation capabilities will include plasma enhanced chemical vapor deposition, and the physical vapor deposition techniques of evaporation (with and without ion assist), magnetron sputtering, and ion beam scattering. Initial studies will concentrate on the nucleation and interface structure of microcrystalline diamond thin films and the response of their surfaces to well-characterized inert and reactive ion beams. Similar experiments will be used to probe the nucleation, surface reactivity, and bonding for silicon-based films. Other technologically important materials will be studied. These experiments will be used to identify the physical factors which conceal film bonding and morphology and impact materials technology.