Proposal to Acquire a Rotating Anode X-Ray Generator for Semiconductor Materials Processing Characterization

所要求的高强度旋转阳极x射线 发电机将与现有的x- 射线衍射仪器在大学 威斯康星-麦迪逊研究材料的影响 半导体中缺陷结构的处理 例如CdTe、GaAs和硅。 三个研究 将利用该X射线源的方案有： (1)表面抛光损伤的大小和来源 （2）坩埚下降法晶体生长对GaAs中GaAs的 体II-VI族半导体中的缺陷结构（3） 表面和亚表面损伤的演变过程中， 硅和GaAs的反应离子蚀刻。

The requested high intensity rotating anode x-ray generator will be used in conjunction with existing x- ray diffraction instrumentation at the University of Wisconsin-Madison to study the effect of material processing on the defect structure in semiconductors such as CdTe, GaAs, and silicon. Three research programs that will utilize this x-ray source are: (1) The magnitude and origin of surface polish damage in GaAs (2) The effect of Bridgman crystal growth on the defect structures in bulk II-VI semiconductors (3) The evolution of surface and subsurface damage during the reactive ion etching of silicon and GaAs.