Engineering Research Equipment Grant: Electrochemical Profiler/Photovoltage Spectroscopy

所请求的电化学剖面仪/光电压谱单元为光学研究所最近建立的光电子设施带来了新的能力，用于外延生长、表征和制备III-V异质结光电子器件。轮廓/光电压仪器是广泛研究计划的许多方面所必需的，其中包括对量子井激光器的研究以及生长在(111)衬底上的调制器(对于低阈值和较高调制频率的激光器，和更大的电光效应)，具有掺杂有源区的量子阱激光器(为了更高的增益)，新型圆对称表面发射激光器结构，假象GaInAs量子阱激光器(用于860到110 nm的波长范围内的激光)，高效率二极管激光器以前无法访问的区域)，具有干蚀刻面的量子阱激光器结构(以实现二极管激光器的集成)，快速电光调制器(用于光的高速相位和强度调制)，通过杂质扩散实现超晶格无序化的一种创新方法(在退火过程中使用外加电场)以及在平面光学结构中使用这种选择性无序结构(激光器，光波导、光栅电光调制器)。这些研究计划是对间接带隙半导体(间接等电子杂质复合体)方面正在进行的努力的补充带隙半导体，低噪声雪崩光电二极管和绝缘体结构上硅中的非线性光学相互作用)，也在光学研究所。促进增长的设施，光电子III-V半导体的表征和器件制造目前包括分子束外延机，拉曼，光致发光和激发光谱、光刻、化学辅助离子束刻蚀和快速热退火。电化学剖面仪和光电压谱装置将被用来测量载流子浓度和带隙分布在III-V和Si最先进的光电材料和器件中。

The requested electrochemical profiler/photovoltage spectroscopy unit brings new capabilities to the recently established optoelectronics facility at the Institute of Optics, for epitaxial growth, characterization and fabrication of III-V heterstructure optoelectronics devices. The profile/photovoltage instrumentation is required for many aspects of an extensive research program that includes the investigation of quantum well lasers and modulators grown on (111) substrates (for low threshold and higher modulation frequency lasers, and larger electro-optic effect), quantum well lasers with doped active regions (for higher gain), novel circularly symmetric surface emitting laser structures, pseudomorphic GaInAs quantum well lasers (for lasing in the wavelength range of 860 to 110 nm., a region previously inaccessible to high efficiency diode lasers), quantum well lasers structures with dry etched facets (to enable integration of diode lasers), fast electro-optic modulators (for high speed phase and intensity modulation of light), an innovative approach to the disordering of superlattices by impurity diffusions (using applied electric fields during annealing) and the use of such selectively disordered structures in planar optical structures (lasers, waveguides, gratings electro-optic modulators). These research programs compliment the ongoing effort in indirect bandgap semiconductors (isoelectronic impurity complexes in indirect bandgap semiconductors, low noise avalanche photodiodes and nonlinear optical interactions in silicon on insulator structures), also at the Institute of Optics. The facility for growth, characterization and device fabrication of optoelectronic III-V semiconductors presently includes a molecular beam epitaxy machine, Raman, photoluminescence and excitation spectroscopy, photolithography, chemically assisted ion beam etching and rapid thermal annealing. The electrochemical profiler and photovoltage spectroscopy unit will be used to measure carrier concentration and bandgap profiles in III-V and Si state of the art optoelectronic materials and devices.